Band Structure and Bulk Modulus of GaN
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876436896409714688 |
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| author | A. Mahmood |
| author_facet | A. Mahmood |
| contents | Band Structure and Bulk Modulus of GaN A. Mahmood S. Muhl L. Enrique Sansores Física, Astronomía y Matemáticas Due to its wide and direct band gap, gallium nitride, GaN, is a promising candidate in semiconductor technology. Now the zincblend modification of GaN is also receiving much attention in electronic and optoelectronic applications. We have done band structure calculations of the zincblend and wurzite modifications of this wide band gap semiconducting material by using the density functional and total-energy technique in the local density approximation which is the most powerful ab-initio quantum-mechanical method. The important energy gaps have been determined and compared with the previous theoretical and experimental results. The bulk modulus, density of state, charge density and other important parameters have also been calculated 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200968 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200968 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Band Structure and Bulk Modulus of GaN A. Mahmood Física, Astronomía y Matemáticas Band Structure and Bulk Modulus of GaN A. Mahmood S. Muhl L. Enrique Sansores Física, Astronomía y Matemáticas Due to its wide and direct band gap, gallium nitride, GaN, is a promising candidate in semiconductor technology. Now the zincblend modification of GaN is also receiving much attention in electronic and optoelectronic applications. We have done band structure calculations of the zincblend and wurzite modifications of this wide band gap semiconducting material by using the density functional and total-energy technique in the local density approximation which is the most powerful ab-initio quantum-mechanical method. The important energy gaps have been determined and compared with the previous theoretical and experimental results. The bulk modulus, density of state, charge density and other important parameters have also been calculated 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200968 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Band Structure and Bulk Modulus of GaN |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200968 |