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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Online Access: | https://www.redalyc.org/articulo.oa?id=94200977 |
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Table of Contents:
- Optoelectronic properties of CdO-Si heterojunctions Mauricio Ortega Arturo Morales Acevedo Guillermo Santana Física, Astronomía y Matemáticas CdO-Si heterojunctions were fabricated by depositing CdO polycrystalline thin film on p-type single crystal siliconwafers by chemical bath deposition. The current-voltage characteristics under dark and illumination of CdO/Si devices resemble those of a light sensitive diode. From the CdO/Si diode spectral sensitivity curves (A/W), it has been deduced that CdO films allow good response in the visible and the near infrared and show high sensitivity, in comparison to conventional p-n silicon detectors 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200977 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9