High deposition rate a-Si:H layers from pure SiH4 and from a 10% dilution of SiH4 in H2
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| Format: | Artículo científico |
| Langue: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876442377983361024 |
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| author | M. Estrada |
| author_facet | M. Estrada |
| contents | High deposition rate a-Si:H layers from pure SiH4 and from a 10% dilution of SiH4 in H2 M. Estrada A. Cerdeira S. Soto I. Pereyra Física, Astronomía y Matemáticas In this paper, we present results of the deposition rates and the characterization of a-Si:H layers deposited from pure SiH4 in a 13.56 MHz Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, where the use of parallel plates of equal area, long gas residence as well as the optimization of process parameters permitted to double previously reported deposition rates obtained employing this rf frequency and gas. A deposition process using a 10% dilution of SiH4 in H2.was also optimized to increase the deposition rate to 1,5 mm/hr. I-V and I-T curves of PIN diodes up to 18 mm thick fabricated on these high deposition rates a-Si:H layers were characterized. The density of ionized states at deep depletion were determined and compare with those obtained for diodes fabricated with other standard and high deposition rate methods 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200981 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200981 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | High deposition rate a-Si:H layers from pure SiH4 and from a 10% dilution of SiH4 in H2 M. Estrada Física, Astronomía y Matemáticas High deposition rate a-Si:H layers from pure SiH4 and from a 10% dilution of SiH4 in H2 M. Estrada A. Cerdeira S. Soto I. Pereyra Física, Astronomía y Matemáticas In this paper, we present results of the deposition rates and the characterization of a-Si:H layers deposited from pure SiH4 in a 13.56 MHz Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, where the use of parallel plates of equal area, long gas residence as well as the optimization of process parameters permitted to double previously reported deposition rates obtained employing this rf frequency and gas. A deposition process using a 10% dilution of SiH4 in H2.was also optimized to increase the deposition rate to 1,5 mm/hr. I-V and I-T curves of PIN diodes up to 18 mm thick fabricated on these high deposition rates a-Si:H layers were characterized. The density of ionized states at deep depletion were determined and compare with those obtained for diodes fabricated with other standard and high deposition rate methods 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200981 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | High deposition rate a-Si:H layers from pure SiH4 and from a 10% dilution of SiH4 in H2 |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200981 |