High deposition rate a-Si:H layers from pure SiH4 and from a 10% dilution of SiH4 in H2
Fuente:
Redalyc
Enregistré dans:
| Auteur principal: | M. Estrada |
|---|---|
| Format: | Artículo científico |
| Langue: | en |
| Publié: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
On metastable properties of plasma treated amorphous Si:H films
par: E. Pineík
Publié: (2001)
par: E. Pineík
Publié: (2001)
One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator
par: K.F. Albertin
Publié: (2006)
par: K.F. Albertin
Publié: (2006)
On the transformation of a-Si:H surface to very thin insulating overlayer of device quality due to very low-energy particle impacts
par: E. Pinčík
Publié: (2002)
par: E. Pinčík
Publié: (2002)
Theoretical study of electron - SiH4 collisions using the Schwinger variational principle with plane waves as a trial basis set
par: A. Eiras
Publié: (2005)
par: A. Eiras
Publié: (2005)
Estructura y morfología de películas de pm-Si:H crecidas por PECVD variando la dilución de diclorosilano con hidrógeno y la presión de trabajo
par: C. Álvarez-Macías
Publié: (2011)
par: C. Álvarez-Macías
Publié: (2011)
P-type doping in a-Si1-xCx:H obtained by PECVD
par: M.N.P. Carreño
Publié: (1999)
par: M.N.P. Carreño
Publié: (1999)
Adsorption of C2H2C2O3 on Si(001)
par: R. Miotto
Publié: (2004)
par: R. Miotto
Publié: (2004)
Plasma-deposited a-C(N):H Films
par: D.F. Franceschini
Publié: (2000)
par: D.F. Franceschini
Publié: (2000)
Electrical characterization of planarized a-SiGe:H Thin-film Transistors
par: M. Dominguez
Publié: (2013)
par: M. Dominguez
Publié: (2013)
Redox Cycling at Tellurium: Selective and Multiple Activation of Si─H Bonds in Common Organosilanes and SiH4
par: Martin Hejda, et autres
Publié: (2025)
par: Martin Hejda, et autres
Publié: (2025)
Numerical Simulation of the Optical Properties of SiC/SiO2 Quantum Dots
par: J. S. de Sousa
Publié: (2004)
par: J. S. de Sousa
Publié: (2004)
Current Conduction Mechanisms in n-type a-SiGe:H/p-type c-Si Heterojunctions
par: P. Rosales-Quintero
Publié: (2008)
par: P. Rosales-Quintero
Publié: (2008)
H2 kinematics of outflows
par: I. Cruz González
Publié: (2002)
par: I. Cruz González
Publié: (2002)
Masses, mixings and degeneracy of the neutral heavy Higgs system H2-H3
par: O. Félix-Beltrán
Publié: (2009)
par: O. Félix-Beltrán
Publié: (2009)
Si3 N4 Young’s modulus measurement from microcantilever beams using a calibrated stylus profiler
par: J. E. Munguía-Cervantes
Publié: (2017)
par: J. E. Munguía-Cervantes
Publié: (2017)
High resolution H2 observations of herbig-haro flows
par: Antonio Chrysostomou
Publié: (2002)
par: Antonio Chrysostomou
Publié: (2002)
Obtención y caracterización de TiSi2
par: A. Torres Jacome
Publié: (2001)
par: A. Torres Jacome
Publié: (2001)
Planetary Nebulae with H2 Emission
par: Lorena Arias
Publié: (2003)
par: Lorena Arias
Publié: (2003)
Observations of Massive Supersonic Outflows in Highly Luminous H II Regions
par: M. Relaño
Publié: (2003)
par: M. Relaño
Publié: (2003)
Cometary Compact H II Regions
par: M. G. Hoare
Publié: (2003)
par: M. G. Hoare
Publié: (2003)
Optoelectronic properties of CdO-Si heterojunctions
par: Mauricio Ortega
Publié: (1999)
par: Mauricio Ortega
Publié: (1999)
Formation of electrical conductive hard-carbon (DLC) films using i C4H10/N2 supermagnetron plasma
par: Jun Takahashi
Publié: (1999)
par: Jun Takahashi
Publié: (1999)
Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy
par: L.F. Zou
Publié: (1999)
par: L.F. Zou
Publié: (1999)
Structure of Si nano-clusters in ZnO matrix
par: R. García
Publié: (1999)
par: R. García
Publié: (1999)
A Theoretical Study of Acrylonitrile Adsorption on Si(001)
par:
Publié: (2004)
par:
Publié: (2004)
High-velocity gas in the luminous H II regions of ngc 1530
par: J. H. Knapen
Publié: (2002)
par: J. H. Knapen
Publié: (2002)
The calibration of the O/H abundance indicators for extragalactic H II regions based on O II recombination lines
par: A. R. López
Publié: (2007)
par: A. R. López
Publié: (2007)
VLA observations of H2O and OH (1612 MHz) maser emission toward OH 231.8+4.2
par: L.F. Rodríguez
Publié: (2002)
par: L.F. Rodríguez
Publié: (2002)
Vidrios SiO2 nanocompuestos preparados por sol-gel: revisión
par: F. Ruiz
Publié: (2000)
par: F. Ruiz
Publié: (2000)
The Irregular Galaxy IC 1613: Detailed Kinematics of H I and H II Shells in the Complex of Ongoing Star Formation
par: T. A. Lozinskaya
Publié: (2003)
par: T. A. Lozinskaya
Publié: (2003)
Chemical Stability of Ta Diffusion Barrier Between Cu and Si
par: T. Laurila
Publié: (1999)
par: T. Laurila
Publié: (1999)
H2 velocity structure in the molecular outflow dr 21
par: Irene Cruz-González
Publié: (2007)
par: Irene Cruz-González
Publié: (2007)
Joining and characterizations of silicon nitride (Si3 N4 ) to titanium (Ti) using a Cu-foil and Cu-Zn braze alloy
par: J. Lemus-Ruiz
Publié: (2009)
par: J. Lemus-Ruiz
Publié: (2009)
The huge filamentary galactic H II zone
par: N. V. Bystrova
Publié: (2002)
par: N. V. Bystrova
Publié: (2002)
Chemical Abundances of Extragalactic H II regions
par: A. Peimbert
Publié: (2003)
par: A. Peimbert
Publié: (2003)
The H nature of the universe at z~0.83
par: V. Villar
Publié: (2007)
par: V. Villar
Publié: (2007)
Champagne Flows and Winds in H II Regions
par: S. Lizano
Publié: (2003)
par: S. Lizano
Publié: (2003)
Probing cosmological parameters with H II galaxies
par: Elena Terlevich
Publié: (2002)
par: Elena Terlevich
Publié: (2002)
NIR Studies of H II Galaxies with CANICA
par: E. Recillas
Publié: (2005)
par: E. Recillas
Publié: (2005)
RBS and TEM studies of strain in epitaxially grown CaF2 on Si(111)
par: A. Tempel
Publié: (1999)
par: A. Tempel
Publié: (1999)
Documents similaires
-
On metastable properties of plasma treated amorphous Si:H films
par: E. Pineík
Publié: (2001) -
One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator
par: K.F. Albertin
Publié: (2006) -
On the transformation of a-Si:H surface to very thin insulating overlayer of device quality due to very low-energy particle impacts
par: E. Pinčík
Publié: (2002) -
Theoretical study of electron - SiH4 collisions using the Schwinger variational principle with plane waves as a trial basis set
par: A. Eiras
Publié: (2005) -
Estructura y morfología de películas de pm-Si:H crecidas por PECVD variando la dilución de diclorosilano con hidrógeno y la presión de trabajo
par: C. Álvarez-Macías
Publié: (2011)