Short thermal annealing for crystallization of plasma-CVD amorphous silicon films
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| Format: | Artículo científico |
| Language: | es |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
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| _version_ | 1876491143525433344 |
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| author | Yasuhiro Matsumoto |
| author_facet | Yasuhiro Matsumoto |
| contents | Short thermal annealing for crystallization of plasma-CVD amorphous silicon films Yasuhiro Matsumoto Saúl Robles Sergio Jiménez Sandoval Física, Astronomía y Matemáticas The possibility of obtaining acceptable crystallization time and high-quality poly-Si by using PECVD depositedamorphous silicon films with silane has been explored. The film structure has been investigated by x-ray diffraction andRaman spectroscopy as a function of annealing temperature. For samples annealed only 10 minutes, we found a sharpconductivity increment of about tree orders of magnitude for temperatures near and above 780°C. The x-ray diffractionfor samples treated at 850°C, clearly shows crystalline phases along the <111>, <220> and <311> Si crystallographicdirections in the case both c-Si and quartz substrates. This means, despite the short thermal annealing time, that theformed poly-Si textures are very similar to those made utilizing long-time crystallization procedures 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201003 es http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.10 |
| format | Artículo científico |
| id | redalyc_94201003 |
| institution | Redalyc |
| language | es |
| publishDate | 2000 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Short thermal annealing for crystallization of plasma-CVD amorphous silicon films Yasuhiro Matsumoto Física, Astronomía y Matemáticas Short thermal annealing for crystallization of plasma-CVD amorphous silicon films Yasuhiro Matsumoto Saúl Robles Sergio Jiménez Sandoval Física, Astronomía y Matemáticas The possibility of obtaining acceptable crystallization time and high-quality poly-Si by using PECVD depositedamorphous silicon films with silane has been explored. The film structure has been investigated by x-ray diffraction andRaman spectroscopy as a function of annealing temperature. For samples annealed only 10 minutes, we found a sharpconductivity increment of about tree orders of magnitude for temperatures near and above 780°C. The x-ray diffractionfor samples treated at 850°C, clearly shows crystalline phases along the <111>, <220> and <311> Si crystallographicdirections in the case both c-Si and quartz substrates. This means, despite the short thermal annealing time, that theformed poly-Si textures are very similar to those made utilizing long-time crystallization procedures 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201003 es http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.10 |
| title | Short thermal annealing for crystallization of plasma-CVD amorphous silicon films |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94201003 |