Tight-binding hamiltonians for the study of the electronic structure of the valence band of the II-VI binary/ternary-alloy interfaces

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Autore principale: R. Baquero
Natura: Artículo científico
Lingua:en
Pubblicazione: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2000
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author R. Baquero
author_facet R. Baquero
contents Tight-binding hamiltonians for the study of the electronic structure of the valence band of the II-VI binary/ternary-alloy interfaces R. Baquero D. Olguín Física, Astronomía y Matemáticas II VI alloys binding method electronic band structure: tight We present an electronic band structure calculation of the valence band of the II-VI binary/ternary—alloy interfaces. Weuse the empirical tight-binding method and the surface Greens function matching method. For the ternary alloys we useour previously set Hamiltonians. They describe well the band gap change with composition obtained experimentally. Withthis data, we go on to describe the interface states. At the interface domain, we find three non-dispersive- and twointerface-states besides the known bulk bands. We make use of the available theoretical calculations for the (001)-orientedsurfaces of the binary compounds and for the binary/binary interfaces to compare our new results with 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201007 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.10
format Artículo científico
id redalyc_94201007
institution Redalyc
language en
publishDate 2000
publisher Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
spellingShingle Tight-binding hamiltonians for the study of the electronic structure of the valence band of the II-VI binary/ternary-alloy interfaces
R. Baquero
Física, Astronomía y Matemáticas
II
VI alloys
binding method
electronic band structure: tight
Tight-binding hamiltonians for the study of the electronic structure of the valence band of the II-VI binary/ternary-alloy interfaces R. Baquero D. Olguín Física, Astronomía y Matemáticas II VI alloys binding method electronic band structure: tight We present an electronic band structure calculation of the valence band of the II-VI binary/ternary—alloy interfaces. Weuse the empirical tight-binding method and the surface Greens function matching method. For the ternary alloys we useour previously set Hamiltonians. They describe well the band gap change with composition obtained experimentally. Withthis data, we go on to describe the interface states. At the interface domain, we find three non-dispersive- and twointerface-states besides the known bulk bands. We make use of the available theoretical calculations for the (001)-orientedsurfaces of the binary compounds and for the binary/binary interfaces to compare our new results with 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201007 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.10
title Tight-binding hamiltonians for the study of the electronic structure of the valence band of the II-VI binary/ternary-alloy interfaces
topic Física, Astronomía y Matemáticas
II
VI alloys
binding method
electronic band structure: tight
url https://www.redalyc.org/articulo.oa?id=94201007