Partial-density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
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| _version_ | 1876491248724869120 |
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| author | J. C. Woicik |
| author_facet | J. C. Woicik |
| contents | Partial-density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy J. C. Woicik E. J. Nelson T. Kendelewicz P. Pianetta Física, Astronomía y Matemáticas We describe an experimental method by which site-specific valence-electronic structure may be obtained. Itutilizes the spatial dependence of the electric-field intensity that results from the superposition of the incidentand reflected x-ray beams within the vicinity of a crystal x-ray Bragg reflection. Resolution of the anion andcation contributions to the GaAs valence-band density of states is demonstrated 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201103 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.11 |
| format | Artículo científico |
| id | redalyc_94201103 |
| institution | Redalyc |
| language | en |
| publishDate | 2000 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Partial-density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy J. C. Woicik Física, Astronomía y Matemáticas Partial-density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy J. C. Woicik E. J. Nelson T. Kendelewicz P. Pianetta Física, Astronomía y Matemáticas We describe an experimental method by which site-specific valence-electronic structure may be obtained. Itutilizes the spatial dependence of the electric-field intensity that results from the superposition of the incidentand reflected x-ray beams within the vicinity of a crystal x-ray Bragg reflection. Resolution of the anion andcation contributions to the GaAs valence-band density of states is demonstrated 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201103 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.11 |
| title | Partial-density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94201103 |