Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
|
| Subjects: | |
| Online Access: | https://www.redalyc.org/articulo.oa?id=94201103 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Table of Contents:
- Partial-density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy J. C. Woicik E. J. Nelson T. Kendelewicz P. Pianetta Física, Astronomía y Matemáticas We describe an experimental method by which site-specific valence-electronic structure may be obtained. Itutilizes the spatial dependence of the electric-field intensity that results from the superposition of the incidentand reflected x-ray beams within the vicinity of a crystal x-ray Bragg reflection. Resolution of the anion andcation contributions to the GaAs valence-band density of states is demonstrated 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201103 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.11