Homogeneity optimized layer deposition on large substrates in the molecular beam regime of Knudsen-type effusion sources
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
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| _version_ | 1876470901930721280 |
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| author | A. Zehe |
| author_facet | A. Zehe |
| contents | Homogeneity optimized layer deposition on large substrates in the molecular beam regime of Knudsen-type effusion sources A. Zehe A. Ramírez Física, Astronomía y Matemáticas homogeneity layer growth MBE technology Radial beam flux inhomogeneities of Knudsen-type evaporation sources have an adverse effect on the lateralthickness distribution, dopant concentration and mole-fraction uniformity of deposited thin films on wafers, inparticular when the substrate size is of concern. Presently, the common and most successful technique in order toachieve uniformities better that 1 % is to slowly rotate the substrate during growth. This however is not compatiblewith most in-growth analyzing techniques, as e.g. Auger electron spectroscopy (AES) and high energy electrondiffraction (RHEED), leave alone the unwanted particle generation by mechanically moving parts in an ultra-highvacuum chamber. The realization of so-called new physics devices, based on abrupt heterostructures andsuperlattices, requires an accurate real-time determination of growth parameters during the fabrication process. This ispossible only by use of a stationary substrate, but then under the aspect of a modified system configuration, includingthe arrangement of beam sources and the positioning of the substrate inside the vacuum chamber.We present a detailed analysis of the geometrical arrangement of Knudsen-type effusion sources with respect to awafer, and calculate the distribution of the normalized total layer thickness and the composition ratio over a substratewith 7.5 cm (3 inch) diameter for the classical and the here proposed optimized system configuration. A considerableimprovement of homogeneity can be achieved 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201108 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.11 |
| format | Artículo científico |
| id | redalyc_94201108 |
| institution | Redalyc |
| language | en |
| publishDate | 2000 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Homogeneity optimized layer deposition on large substrates in the molecular beam regime of Knudsen-type effusion sources A. Zehe Física, Astronomía y Matemáticas homogeneity layer growth MBE technology Homogeneity optimized layer deposition on large substrates in the molecular beam regime of Knudsen-type effusion sources A. Zehe A. Ramírez Física, Astronomía y Matemáticas homogeneity layer growth MBE technology Radial beam flux inhomogeneities of Knudsen-type evaporation sources have an adverse effect on the lateralthickness distribution, dopant concentration and mole-fraction uniformity of deposited thin films on wafers, inparticular when the substrate size is of concern. Presently, the common and most successful technique in order toachieve uniformities better that 1 % is to slowly rotate the substrate during growth. This however is not compatiblewith most in-growth analyzing techniques, as e.g. Auger electron spectroscopy (AES) and high energy electrondiffraction (RHEED), leave alone the unwanted particle generation by mechanically moving parts in an ultra-highvacuum chamber. The realization of so-called new physics devices, based on abrupt heterostructures andsuperlattices, requires an accurate real-time determination of growth parameters during the fabrication process. This ispossible only by use of a stationary substrate, but then under the aspect of a modified system configuration, includingthe arrangement of beam sources and the positioning of the substrate inside the vacuum chamber.We present a detailed analysis of the geometrical arrangement of Knudsen-type effusion sources with respect to awafer, and calculate the distribution of the normalized total layer thickness and the composition ratio over a substratewith 7.5 cm (3 inch) diameter for the classical and the here proposed optimized system configuration. A considerableimprovement of homogeneity can be achieved 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201108 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.11 |
| title | Homogeneity optimized layer deposition on large substrates in the molecular beam regime of Knudsen-type effusion sources |
| topic | Física, Astronomía y Matemáticas homogeneity layer growth MBE technology |
| url | https://www.redalyc.org/articulo.oa?id=94201108 |