The effect of carrier diffusion and recombination in semiconductors on the photoacoustic signal
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
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| _version_ | 1876422782639669248 |
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| author | L. Villegas Lelovsky |
| author_facet | L. Villegas Lelovsky |
| contents | The effect of carrier diffusion and recombination in semiconductors on the photoacoustic signal L. Villegas Lelovsky I. N. Volovichev G. González de la Cruz Yu. G. Gurevich Física, Astronomía y Matemáticas Non Recombination Thermal waves equilibrium carriers A quantitative derivation is presented for the heat transport in bipolar semiconductors, taking into account generation andheating of carriers on the surface due to an incident modulated laser beam on the surface and finite carrier diffusion andrecombination in the solid. The temperature distribution as function of the position and time in the semiconductor iscalculated using appropriate boundary conditions according to the photoacoustic experimental conditions. In addition,special emphasis is pointed out in the heat power density generated in the sample due to the recombination of the electronholepair and the effect of the inhomogeneous temperature distribution on the thermal generation rate of carriers in thephotoacoustic signal 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201111 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.11 |
| format | Artículo científico |
| id | redalyc_94201111 |
| institution | Redalyc |
| language | en |
| publishDate | 2000 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | The effect of carrier diffusion and recombination in semiconductors on the photoacoustic signal L. Villegas Lelovsky Física, Astronomía y Matemáticas Non Recombination Thermal waves equilibrium carriers The effect of carrier diffusion and recombination in semiconductors on the photoacoustic signal L. Villegas Lelovsky I. N. Volovichev G. González de la Cruz Yu. G. Gurevich Física, Astronomía y Matemáticas Non Recombination Thermal waves equilibrium carriers A quantitative derivation is presented for the heat transport in bipolar semiconductors, taking into account generation andheating of carriers on the surface due to an incident modulated laser beam on the surface and finite carrier diffusion andrecombination in the solid. The temperature distribution as function of the position and time in the semiconductor iscalculated using appropriate boundary conditions according to the photoacoustic experimental conditions. In addition,special emphasis is pointed out in the heat power density generated in the sample due to the recombination of the electronholepair and the effect of the inhomogeneous temperature distribution on the thermal generation rate of carriers in thephotoacoustic signal 2000 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201111 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.11 |
| title | The effect of carrier diffusion and recombination in semiconductors on the photoacoustic signal |
| topic | Física, Astronomía y Matemáticas Non Recombination Thermal waves equilibrium carriers |
| url | https://www.redalyc.org/articulo.oa?id=94201111 |