XPS analysis of oxidation states of Te in CdTe oxide films grown by rf sputtering with an Ar -NH3 plasma
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| Formato: | Artículo científico |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1876468806040158208 |
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| author | P. Bartolo Pérez |
| author_facet | P. Bartolo Pérez |
| contents | XPS analysis of oxidation states of Te in CdTe oxide films grown by rf sputtering with an Ar -NH3 plasma P. Bartolo Pérez R. Castro Rodríguez W. Cauich F. Caballero Briones M.H. Farías J. L. Peña Física, Astronomía y Matemáticas XPS Ammonia CdTe oxide Sputtering Using rf-sputtering, CdTe oxide films were grown on glass substrates in a controlled plasma of Ar-NH3. The elementalconcentration and oxidation state of Te were determined by x-ray photoelectron spectroscopy. When the NH3 partialpressure increases from 3´10-6 to 1´10-4 Torr, the relative atomic concentration of oxygen incorporated in the filmsincreases, whereas those of Cd and Te decrease. For the NH3 partial pressures of 6´10-6 Torr and smaller than 7´10-5 Torr,in films of CdTe oxide coexist different oxidation states of Te, Te-2 as in CdTe and Te+4 as in CdTeO3. While that for NH3partial pressure of 1´10-4 Torr and up, the films only contain the oxidation state Te+4. With x-ray diffraction it is observedthat when the NH3 pressure in creases the oxide films of CdTe become amorphous 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201203 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| format | Artículo científico |
| id | redalyc_94201203 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | XPS analysis of oxidation states of Te in CdTe oxide films grown by rf sputtering with an Ar -NH3 plasma P. Bartolo Pérez Física, Astronomía y Matemáticas XPS Ammonia CdTe oxide Sputtering XPS analysis of oxidation states of Te in CdTe oxide films grown by rf sputtering with an Ar -NH3 plasma P. Bartolo Pérez R. Castro Rodríguez W. Cauich F. Caballero Briones M.H. Farías J. L. Peña Física, Astronomía y Matemáticas XPS Ammonia CdTe oxide Sputtering Using rf-sputtering, CdTe oxide films were grown on glass substrates in a controlled plasma of Ar-NH3. The elementalconcentration and oxidation state of Te were determined by x-ray photoelectron spectroscopy. When the NH3 partialpressure increases from 3´10-6 to 1´10-4 Torr, the relative atomic concentration of oxygen incorporated in the filmsincreases, whereas those of Cd and Te decrease. For the NH3 partial pressures of 6´10-6 Torr and smaller than 7´10-5 Torr,in films of CdTe oxide coexist different oxidation states of Te, Te-2 as in CdTe and Te+4 as in CdTeO3. While that for NH3partial pressure of 1´10-4 Torr and up, the films only contain the oxidation state Te+4. With x-ray diffraction it is observedthat when the NH3 pressure in creases the oxide films of CdTe become amorphous 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201203 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| title | XPS analysis of oxidation states of Te in CdTe oxide films grown by rf sputtering with an Ar -NH3 plasma |
| topic | Física, Astronomía y Matemáticas XPS Ammonia CdTe oxide Sputtering |
| url | https://www.redalyc.org/articulo.oa?id=94201203 |