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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| Online Access: | https://www.redalyc.org/articulo.oa?id=94201203 |
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Table of Contents:
- XPS analysis of oxidation states of Te in CdTe oxide films grown by rf sputtering with an Ar -NH3 plasma P. Bartolo Pérez R. Castro Rodríguez W. Cauich F. Caballero Briones M.H. Farías J. L. Peña Física, Astronomía y Matemáticas XPS Ammonia CdTe oxide Sputtering Using rf-sputtering, CdTe oxide films were grown on glass substrates in a controlled plasma of Ar-NH3. The elementalconcentration and oxidation state of Te were determined by x-ray photoelectron spectroscopy. When the NH3 partialpressure increases from 3´10-6 to 1´10-4 Torr, the relative atomic concentration of oxygen incorporated in the filmsincreases, whereas those of Cd and Te decrease. For the NH3 partial pressures of 6´10-6 Torr and smaller than 7´10-5 Torr,in films of CdTe oxide coexist different oxidation states of Te, Te-2 as in CdTe and Te+4 as in CdTeO3. While that for NH3partial pressure of 1´10-4 Torr and up, the films only contain the oxidation state Te+4. With x-ray diffraction it is observedthat when the NH3 pressure in creases the oxide films of CdTe become amorphous 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201203 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12