Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| author | M. Zapata Torres |
| author_facet | M. Zapata Torres |
| contents | Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x M. Zapata Torres R. Castro Rodriguez M. Meléndez Lira Física, Astronomía y Matemáticas IR materials semiconductor thin films ordered vacancies compounds Bandgap variation in the near infrared employing CdTe-based alloys has potential applications in the optoelectronicindustry. Pursuing it we have deposited thin films of the alloy (CdTe)x(In2Te3)1-x employing the closed space vaportransport technique combined with free evaporation. As sources we employed CdTe and In2Te3 powders. The temperatureof the sources and the substrate controlled sample composition. Structural characterization was carried out employing xraydiffraction and scanning electron microscopy. Chemical composition was determined by energy dispersive x-rayanalysis. Room temperature transmission and modulated transmission spectroscopies were employed for opticalcharacterization. The results shown a sharp band edge in the transmission spectrum. From it a potential bandgap variationdepending on the indium content in the range from 0.5 to 1.5 eV is inferred. Modulated transmission results clearlyshowed that the band edge is of the direct type 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201205 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| format | Artículo científico |
| id | redalyc_94201205 |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x M. Zapata Torres Física, Astronomía y Matemáticas IR materials semiconductor thin films ordered vacancies compounds Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x M. Zapata Torres R. Castro Rodriguez M. Meléndez Lira Física, Astronomía y Matemáticas IR materials semiconductor thin films ordered vacancies compounds Bandgap variation in the near infrared employing CdTe-based alloys has potential applications in the optoelectronicindustry. Pursuing it we have deposited thin films of the alloy (CdTe)x(In2Te3)1-x employing the closed space vaportransport technique combined with free evaporation. As sources we employed CdTe and In2Te3 powders. The temperatureof the sources and the substrate controlled sample composition. Structural characterization was carried out employing xraydiffraction and scanning electron microscopy. Chemical composition was determined by energy dispersive x-rayanalysis. Room temperature transmission and modulated transmission spectroscopies were employed for opticalcharacterization. The results shown a sharp band edge in the transmission spectrum. From it a potential bandgap variationdepending on the indium content in the range from 0.5 to 1.5 eV is inferred. Modulated transmission results clearlyshowed that the band edge is of the direct type 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201205 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| title | Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x |
| topic | Física, Astronomía y Matemáticas IR materials semiconductor thin films ordered vacancies compounds |
| url | https://www.redalyc.org/articulo.oa?id=94201205 |