Influence of several relaxation times on the cryogenic self-heating of silicon devices
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1876424809110306816 |
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| author | F. Javier De la Hidalga. W. |
| author_facet | F. Javier De la Hidalga. W. |
| contents | Influence of several relaxation times on the cryogenic self-heating of silicon devices F. Javier De la Hidalga. W. Mauro Landa V. Física, Astronomía y Matemáticas Self MOSFET Heating Cryogenics Relaxation The first experimental determination of self-heating in silicon devices operating at low temperatures wasbased on their transient response; there have been, however, some concerns regarding the validity of thisapproach. In this work, we compare several electrical relaxation times with the temperature dependent thermaltime constant of a silicon sample for the 5K<T<300K temperature range. The electrical relaxation times werecalculated for the most common processes that are responsible for the relaxation of the depletion region atlow temperatures. We found that thermal transients are undistinguishable from the electrical transients forlow/moderate electric fields and nondegenerate uncompensated silicon samples operating at liquid heliumtemperatures. These results disagree with the assumption widely used at room temperature, whichestablishes that thermal events are much slower than the relaxation of the depletion region 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201206 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| format | Artículo científico |
| id | redalyc_94201206 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Influence of several relaxation times on the cryogenic self-heating of silicon devices F. Javier De la Hidalga. W. Física, Astronomía y Matemáticas Self MOSFET Heating Cryogenics Relaxation Influence of several relaxation times on the cryogenic self-heating of silicon devices F. Javier De la Hidalga. W. Mauro Landa V. Física, Astronomía y Matemáticas Self MOSFET Heating Cryogenics Relaxation The first experimental determination of self-heating in silicon devices operating at low temperatures wasbased on their transient response; there have been, however, some concerns regarding the validity of thisapproach. In this work, we compare several electrical relaxation times with the temperature dependent thermaltime constant of a silicon sample for the 5K<T<300K temperature range. The electrical relaxation times werecalculated for the most common processes that are responsible for the relaxation of the depletion region atlow temperatures. We found that thermal transients are undistinguishable from the electrical transients forlow/moderate electric fields and nondegenerate uncompensated silicon samples operating at liquid heliumtemperatures. These results disagree with the assumption widely used at room temperature, whichestablishes that thermal events are much slower than the relaxation of the depletion region 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201206 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| title | Influence of several relaxation times on the cryogenic self-heating of silicon devices |
| topic | Física, Astronomía y Matemáticas Self MOSFET Heating Cryogenics Relaxation |
| url | https://www.redalyc.org/articulo.oa?id=94201206 |