Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1876457264215228416 |
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| author | M. López López |
| author_facet | M. López López |
| contents | Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions M. López López P. Acosta Díaz O. Cano Aguilar F.L. Castillo Alvarado M. Meléndez Lira Física, Astronomía y Matemáticas in Quantum wells situ processing growth interruption molecular beam epitaxy The specific properties of quantum wells (QWs) grown by molecular beam epitaxy (MBE) are directly affected by severalaspects, such as non-intentional incorporated impurities, alloy disorder, interface roughness, etc. These aspects stronglydepend on the particular process used during the MBE growth. In this work, we present results of a photoluminescencespectroscopy (PL) study of AlxGa1-x As / GaAs QWs grown by MBE on GaAs buffer layers which were processed by exsituor in -situ growth interruptions. The QWs exhibit drastic c hanges in their PL spectra depending on the type ofinterruption process performed on the GaAs buffer layer surface. Roughness at the QWs interfaces has been calculatedand correlated with the growth interruption process 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201209 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| format | Artículo científico |
| id | redalyc_94201209 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions M. López López Física, Astronomía y Matemáticas in Quantum wells situ processing growth interruption molecular beam epitaxy Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions M. López López P. Acosta Díaz O. Cano Aguilar F.L. Castillo Alvarado M. Meléndez Lira Física, Astronomía y Matemáticas in Quantum wells situ processing growth interruption molecular beam epitaxy The specific properties of quantum wells (QWs) grown by molecular beam epitaxy (MBE) are directly affected by severalaspects, such as non-intentional incorporated impurities, alloy disorder, interface roughness, etc. These aspects stronglydepend on the particular process used during the MBE growth. In this work, we present results of a photoluminescencespectroscopy (PL) study of AlxGa1-x As / GaAs QWs grown by MBE on GaAs buffer layers which were processed by exsituor in -situ growth interruptions. The QWs exhibit drastic c hanges in their PL spectra depending on the type ofinterruption process performed on the GaAs buffer layer surface. Roughness at the QWs interfaces has been calculatedand correlated with the growth interruption process 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201209 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| title | Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions |
| topic | Física, Astronomía y Matemáticas in Quantum wells situ processing growth interruption molecular beam epitaxy |
| url | https://www.redalyc.org/articulo.oa?id=94201209 |