Imagen de Portada

Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions

Fuente: Redalyc

Guardado en:

Detalles Bibliográficos
Autor principal:	M. López López
Formato:	Artículo científico
Lenguaje:	en
Publicado:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2001
Materias:	Física, Astronomía y Matemáticas in Quantum wells situ processing growth interruption molecular beam epitaxy
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

InAs quantum dots grown on GaAs (100) surfaces subjected to novel in-situ treatments
por: V. H. Méndez-García
Publicado: (2005)

Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
por: J.B. Rojas-Trigos
Publicado: (2016)

Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots
por: A. Yu Gorbachev
Publicado: (2005)

Global well-posedness of solutions for the epitaxy thin film growth model
por: Ning Duan
Publicado: (2021)

InGaAs Embedding of Large InAs Quantum Dots Obtained by Pulsed In Deposition for Long-Wavelength Applications
por: T.E. Lamas
Publicado: (2006)

Characterization of highly doped Ga 0.86 In 0.14 As 0.13 Sb0.87 grown by liquid phase epitaxy
por: J. Díaz-Reyes
Publicado: (2017)

Dynamics of monoatomic steps on the Si(100) surface during MBE growth and post-growth annealing
por: Hervieu, Yuri Yu., et al.
Publicado: (2024)

Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy
por: I. Hernández
Publicado: (2001)

Electronic structure of delta shaped AlGaAs/GaAs quantum wells
por: M.R. Muro-Ortega
Publicado: (2007)

GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE
por: Masao Tamura
Publicado: (2001)

Compositional mixture in R.F. sputtered CdTe oxide films. Raman spectroscopy results
por: A. Martel
Publicado: (2003)

Characterization of SnTe Films Grown by Molecular Beam Epitaxy
por: U. A. Mengui
Publicado: (2006)

Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
por: V. M. Aquino
Publicado: (2007)

Relationship between perceived stigma and depressive symptomatology in women who legally interrupt pregnancy in Mexico City
por: Midiam Moreno López
Publicado: (2019)

Monte Carlo simulation of epitaxial growth of GaInAsSb films
por: Jheison Alejandro Morales
Publicado: (2014)

Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy
por: J. G. Ramírez
Publicado: (2006)

Necropoetic gestures
por: Scott Head
Publicado: (2023)

Growth and Structural Characterization of PbTe/PbEuTe Double Barrier
por: A.M.P. dos Anjos
Publicado: (2006)

Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells
por: C. I. Cabrera
Publicado: (2012)

Critical Irony or the Lovers of Ruins: The Aesthete, the Dandy and the Flâneur
por: Naím Garnica
Publicado: (2017)

Electronic structure of pn delta-doped quantum wells in GaAs
por: I. Rodriguez-Vargas
Publicado: (2007)

Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As QuantumWells: Effects of Applied Electric and In-Plane Magnetic Fields
por: C. A. Duque
Publicado: (2006)

Hydrostatic Pressure and Electric-field Effects on the Shallow Donor Impurity States in GaAs-Ga0.7Al0.3As Quantum-well Wires
por: N. Porras-Montenegro
Publicado: (2006)

Shape Transition and Dislocation Nucleation in Strained Epitaxial Islands
por: J. Jalkanen
Publicado: (2006)

Fundamental electronic transition of InGaN cubic quantum wells
por: D.A. Contreras-Solorio
Publicado: (2007)

Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells
por: I. Rodriguez Vargas
Publicado: (2004)

IMPEACHMENT, POLITICAL CRISIS AND DEMOCRACY IN BRAZIL
por: FELIPE NUNES
Publicado: (2017)

Electrical properties of Ir-silicide formation on p-Si(100) in ultra high vacuum
por: C.K. Chung
Publicado: (1999)

Characterization of CdTe Thin Films Grown on Glass by Hot Wall Epitaxy
por: Sukarno Olavo Ferreira
Publicado: (2006)

Electron quasienergies in a laser-driven n-type delta-doped quantum well in GaAs under an in-plane magnetic field
por: M.T. Pérez-Maldonado
Publicado: (2007)

Effects of In-Plane Magnetic Fields on the Electronic Cyclotron Effective Mass and Landé Factor in GaAs-(Ga,Al)As Quantum Wells
por: E. Reyes-Gómez
Publicado: (2006)

GENDER DIFFERENCES IN WAGE GROWTH AND JOB MOBILITY OF YOUNG WORKERS IN SPAIN
por: LAURA HOSPIDO
Publicado: (2009)

Effect of giant electric fields on the optical properties of GaN quantum wells
por: G. González de la Cruz
Publicado: (2007)

Donor-Related Optical Absorption Spectra for a GaAs-Ga0.7Al0.3As Double Quantum Well under Hydrostatic Pressure and Applied Electric Field Effects
por: N. Raigoza
Publicado: (2006)

Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells
por: B. G. Enders
Publicado: (2009)

Optical properties of near-surface exciton quantum wells
por: N. Atenco Analco
Publicado: (2001)

Electronic transitions in single and double quantum wells made of III–V compound semiconductors
por: A. Velásquez-Arriaga
Publicado: (2013)

Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure
por: O. Oubram
Publicado: (2014)

On the stability of a laminated beam with structural damping and Gurti–Pipkin thermal law
por: Liu Wenjun
Publicado: (2021)

Hibridación in situ para la detección de streptococcus agalactiae en tejidos de tilapia (oreochromis sp.)
por: E. A. Pulido
Publicado: (2010)