In situ analysis of epitaxial Calcium fluoride thin films grown on Silicon
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1876462448902406144 |
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| author | M. Büschel |
| author_facet | M. Büschel |
| contents | In situ analysis of epitaxial Calcium fluoride thin films grown on Silicon M. Büschel A. Zehe A. Ramírez Física, Astronomía y Matemáticas Heteroepitaxial growth of dielectrics films on Si substrates is of considerable interest in the formation of SOIstructuresand 3d -integrated circuits for microelectronic applications. CaF2 crystallizes in the cubic fluorite crystalstructure, which is closely related to the diamond structure of Si. In the course of the pre sent work, CaF2 epitaxialfilms were growth on Si(111) substrates by means of MBE. It was evaporated from a Knudsen-type cell by use of agraphite crucible, while the growth temperature was held at 700 °C. The Si substrates were chemically cleaned, andthe final volatile oxide was desorbed in situ by heating to 900 °C, proven by AES. RHEED has been used to monitorthe film growth in situ, and RBS to study the epitaxial quality. Usually good crystallographic properties are achievedunder optimum growth conditions, with values of cmin < 5% 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201210 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| format | Artículo científico |
| id | redalyc_94201210 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | In situ analysis of epitaxial Calcium fluoride thin films grown on Silicon M. Büschel Física, Astronomía y Matemáticas In situ analysis of epitaxial Calcium fluoride thin films grown on Silicon M. Büschel A. Zehe A. Ramírez Física, Astronomía y Matemáticas Heteroepitaxial growth of dielectrics films on Si substrates is of considerable interest in the formation of SOIstructuresand 3d -integrated circuits for microelectronic applications. CaF2 crystallizes in the cubic fluorite crystalstructure, which is closely related to the diamond structure of Si. In the course of the pre sent work, CaF2 epitaxialfilms were growth on Si(111) substrates by means of MBE. It was evaporated from a Knudsen-type cell by use of agraphite crucible, while the growth temperature was held at 700 °C. The Si substrates were chemically cleaned, andthe final volatile oxide was desorbed in situ by heating to 900 °C, proven by AES. RHEED has been used to monitorthe film growth in situ, and RBS to study the epitaxial quality. Usually good crystallographic properties are achievedunder optimum growth conditions, with values of cmin < 5% 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201210 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.12 |
| title | In situ analysis of epitaxial Calcium fluoride thin films grown on Silicon |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94201210 |