Hernández, I. (2001). Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
Chicago Style (17th ed.) CitationHernández, I. Highly Efficient Individually Addressable Diode Lasers at 830 Nm Grown by Solid Source Molecular Beam Epitaxy. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C, 2001.
MLA (9th ed.) CitationHernández, I. Highly Efficient Individually Addressable Diode Lasers at 830 Nm Grown by Solid Source Molecular Beam Epitaxy. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C, 2001.
Warning: These citations may not always be 100% accurate.