Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy
Fuente:
Redalyc
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Artículo científico |
| Sprache: | en |
| Veröffentlicht: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1876440235598938112 |
|---|---|
| author | I. Hernández |
| author_facet | I. Hernández |
| contents | Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy I. Hernández Física, Astronomía y Matemáticas diodes Infrared laser mini Molecular beam epitaxy High power laser diodes Over 55% power efficiency in 830 nm wavelength range has been demonstrated for four-element individually addressablelaser diode mini-arrays. Diodes performance indicates excellent uniformity, repeatability and quality of epi-wafers grownby solid source molecular beam epitaxy (SS MBE). Slope efficiencies of as high as 1.33 W/A and over 1.7 W CW opticaloutputs at 1.5 A driving current have been achieved from each of the four 55 mm wide aperture diodes constituting the mini-arrays. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201302 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| format | Artículo científico |
| id | redalyc_94201302 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy I. Hernández Física, Astronomía y Matemáticas diodes Infrared laser mini Molecular beam epitaxy High power laser diodes Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy I. Hernández Física, Astronomía y Matemáticas diodes Infrared laser mini Molecular beam epitaxy High power laser diodes Over 55% power efficiency in 830 nm wavelength range has been demonstrated for four-element individually addressablelaser diode mini-arrays. Diodes performance indicates excellent uniformity, repeatability and quality of epi-wafers grownby solid source molecular beam epitaxy (SS MBE). Slope efficiencies of as high as 1.33 W/A and over 1.7 W CW opticaloutputs at 1.5 A driving current have been achieved from each of the four 55 mm wide aperture diodes constituting the mini-arrays. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201302 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| title | Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy |
| topic | Física, Astronomía y Matemáticas diodes Infrared laser mini Molecular beam epitaxy High power laser diodes |
| url | https://www.redalyc.org/articulo.oa?id=94201302 |