Optical characterization of Ge/ZnO nanocomposites
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1866811926061776896 |
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| author | G. Casarrubias Segura |
| author_facet | G. Casarrubias Segura |
| contents | Optical characterization of Ge/ZnO nanocomposites G. Casarrubias Segura O. Zarate U. Pal Física, Astronomía y Matemáticas Thin film Nanocomposites Semiconductor particles Nanoparticles of Ge incorporated in ZnO matrix were synthesized by alternate r.f. sputtering of ZnO and Ge targets on quartz substrates. The composite films were annealed at different temperatures in argon atmosphere and characterized by transmission electron microscopy (TEM) and optical absorption spectroscopy. On increasing the annealing temperature, the size of the Ge particles decreased. Optical absorption of the samples revealed an indirect to direct transition of band gap in the Ge nanoparticles. The direct band gap of nanocrystalline Ge blue shifted on decreasing their average size due to quantum confinement effect in them. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201307 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| format | Artículo científico |
| id | redalyc_94201307 |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Optical characterization of Ge/ZnO nanocomposites G. Casarrubias Segura Física, Astronomía y Matemáticas Thin film Nanocomposites Semiconductor particles Optical characterization of Ge/ZnO nanocomposites G. Casarrubias Segura O. Zarate U. Pal Física, Astronomía y Matemáticas Thin film Nanocomposites Semiconductor particles Nanoparticles of Ge incorporated in ZnO matrix were synthesized by alternate r.f. sputtering of ZnO and Ge targets on quartz substrates. The composite films were annealed at different temperatures in argon atmosphere and characterized by transmission electron microscopy (TEM) and optical absorption spectroscopy. On increasing the annealing temperature, the size of the Ge particles decreased. Optical absorption of the samples revealed an indirect to direct transition of band gap in the Ge nanoparticles. The direct band gap of nanocrystalline Ge blue shifted on decreasing their average size due to quantum confinement effect in them. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201307 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| title | Optical characterization of Ge/ZnO nanocomposites |
| topic | Física, Astronomía y Matemáticas Thin film Nanocomposites Semiconductor particles |
| url | https://www.redalyc.org/articulo.oa?id=94201307 |