On metastable properties of plasma treated amorphous Si:H films
Fuente:
Redalyc
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | Artículo científico |
| Lenguaje: | en |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1876457648536158208 |
|---|---|
| author | E. Pineík |
| author_facet | E. Pineík |
| contents | On metastable properties of plasma treated amorphous Si:H films E. Pineík H. Glesková S. Mráz C. Falcony L. Ortega R. Brunner K. Gmucová J. Müllerová M. Jergel Física, Astronomía y Matemáticas DLTS Metastability Very thin oxide Structural properties Amorphous semiconductors Amorphous hydrogenated silicon (a-Si:H) is well known as a semiconductor with metastable properties. This paper deals with structural and electrical properties of a-Si:H surfaces in virgin state as well as on low-energy ion exposition. Two ion sources were used, namely a monoenergetic ion beam produced by Kaufmann source and ions extracted by the plasma immersion ion implantation technique (PIII). The structural and electronic changes induced by ion impacts, as investigated by the X-ray diffraction at grazing incidence, capacitance-voltage measurements and charge version of deep level transient spectroscopy (Q-DLTS) are reported. The changes induced in the gap-state distribution of a-Si:H due to an interaction with low energy Ar+ ions followed in situ by the short exposure to both hydrogen/oxygen ion beam or to molecular high-purity oxygen are presented. The X-ray measurements confirmed that the most important reflection, which enables us to trace the evolution of the structural changes of a-Si:H layers caused by ion impacts, has the position at 2 28°. It is related to the existence of Si80H20 complexes inside the layer. The existence of only two types of deep metastable distributions Dz and De was observed in MIS structures prepared for the first time by the plasma immersion ion implantation technique. The distribution corresponding to positively charged defects Dh is missing. The use of the standard monoenergetic ion beam technique for the preparation of MIS structure confirmed the existence of three types of deep metastable distributions in a-Si:H (Dh, Dz and De). The differences in the results are explained by the application of a relatively high negative potential (1000 V) on the sample during the PIII experiments. Metastability; Amorphous semiconductors; Structural properties; DLTS; Plasma immersion ion implantation; Very thin oxide 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201309 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| format | Artículo científico |
| id | redalyc_94201309 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | On metastable properties of plasma treated amorphous Si:H films E. Pineík Física, Astronomía y Matemáticas DLTS Metastability Very thin oxide Structural properties Amorphous semiconductors On metastable properties of plasma treated amorphous Si:H films E. Pineík H. Glesková S. Mráz C. Falcony L. Ortega R. Brunner K. Gmucová J. Müllerová M. Jergel Física, Astronomía y Matemáticas DLTS Metastability Very thin oxide Structural properties Amorphous semiconductors Amorphous hydrogenated silicon (a-Si:H) is well known as a semiconductor with metastable properties. This paper deals with structural and electrical properties of a-Si:H surfaces in virgin state as well as on low-energy ion exposition. Two ion sources were used, namely a monoenergetic ion beam produced by Kaufmann source and ions extracted by the plasma immersion ion implantation technique (PIII). The structural and electronic changes induced by ion impacts, as investigated by the X-ray diffraction at grazing incidence, capacitance-voltage measurements and charge version of deep level transient spectroscopy (Q-DLTS) are reported. The changes induced in the gap-state distribution of a-Si:H due to an interaction with low energy Ar+ ions followed in situ by the short exposure to both hydrogen/oxygen ion beam or to molecular high-purity oxygen are presented. The X-ray measurements confirmed that the most important reflection, which enables us to trace the evolution of the structural changes of a-Si:H layers caused by ion impacts, has the position at 2 28°. It is related to the existence of Si80H20 complexes inside the layer. The existence of only two types of deep metastable distributions Dz and De was observed in MIS structures prepared for the first time by the plasma immersion ion implantation technique. The distribution corresponding to positively charged defects Dh is missing. The use of the standard monoenergetic ion beam technique for the preparation of MIS structure confirmed the existence of three types of deep metastable distributions in a-Si:H (Dh, Dz and De). The differences in the results are explained by the application of a relatively high negative potential (1000 V) on the sample during the PIII experiments. Metastability; Amorphous semiconductors; Structural properties; DLTS; Plasma immersion ion implantation; Very thin oxide 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201309 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| title | On metastable properties of plasma treated amorphous Si:H films |
| topic | Física, Astronomía y Matemáticas DLTS Metastability Very thin oxide Structural properties Amorphous semiconductors |
| url | https://www.redalyc.org/articulo.oa?id=94201309 |