Growth of thick epitaxial InAs layers by CSVT

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Auteur principal: R. Huerta
Format: Artículo científico
Langue:en
Publié: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2001
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author R. Huerta
author_facet R. Huerta
contents Growth of thick epitaxial InAs layers by CSVT R. Huerta J. Mimila Arroyo A. Lusson R. Hinojosa A. Tromson F. Jomard Física, Astronomía y Matemáticas DDX InAs Epitaxy Close Spaced Vapor Transport InAs epitaxial layers have been grow by Close Spaced Vapor Transport using water vapor as transporting gas. Growth rate is controlled by source, and substrate temperatures and the transporting gas pressure. The growth seems to be proportional to the transporting gas pressure. Growth rates as high as 1 ìm/min are easily obtained with layers showing mirror like surface. Double X ray diffraction spectra show FWHM typically 19arcsec, 1.7 K photoluminescence shown only near band gap transitions although corresponding to highly doped material. Sulfur incorporation in the epitaxial decreases as the substrate growing temperature increases. Layers as thick as 130 ìm have grown displaying the above mentioned properties. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201313 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13
format Artículo científico
id redalyc_94201313
language en
publishDate 2001
publisher Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
spellingShingle Growth of thick epitaxial InAs layers by CSVT
R. Huerta
Física, Astronomía y Matemáticas
DDX
InAs
Epitaxy
Close Spaced Vapor Transport
Growth of thick epitaxial InAs layers by CSVT R. Huerta J. Mimila Arroyo A. Lusson R. Hinojosa A. Tromson F. Jomard Física, Astronomía y Matemáticas DDX InAs Epitaxy Close Spaced Vapor Transport InAs epitaxial layers have been grow by Close Spaced Vapor Transport using water vapor as transporting gas. Growth rate is controlled by source, and substrate temperatures and the transporting gas pressure. The growth seems to be proportional to the transporting gas pressure. Growth rates as high as 1 ìm/min are easily obtained with layers showing mirror like surface. Double X ray diffraction spectra show FWHM typically 19arcsec, 1.7 K photoluminescence shown only near band gap transitions although corresponding to highly doped material. Sulfur incorporation in the epitaxial decreases as the substrate growing temperature increases. Layers as thick as 130 ìm have grown displaying the above mentioned properties. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201313 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13
title Growth of thick epitaxial InAs layers by CSVT
topic Física, Astronomía y Matemáticas
DDX
InAs
Epitaxy
Close Spaced Vapor Transport
url https://www.redalyc.org/articulo.oa?id=94201313