MOCVD GaInP heterojunction bipolar transistor current gain stability
Fuente:
Redalyc
Enregistré dans:
| Auteur principal: | |
|---|---|
| Format: | Artículo científico |
| Langue: | en |
| Publié: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1876457686034284544 |
|---|---|
| author | V. Cabrera |
| author_facet | V. Cabrera |
| contents | MOCVD GaInP heterojunction bipolar transistor current gain stability V. Cabrera J. Mimila A. Morales R. Huerta Física, Astronomía y Matemáticas in Burn GaInP Transistor Heterojunction The evolution of the GaInP/GaAs hetero-junction bipolar transistor currents during the burn-in process is studied. We found that during the burn-in process all the diffusion currents decrease as a function of the stressing time. The simultaneously observed current gain increase is produced by a more important reduction on the hole current injected into the emitter. Such behavior can be explained by an empirical model that considers impurity reactivation at both sides of the emitter-base junction. Thus, to suppress the burn-in process the whole structure device should be hydrogen free. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201314 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| format | Artículo científico |
| id | redalyc_94201314 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | MOCVD GaInP heterojunction bipolar transistor current gain stability V. Cabrera Física, Astronomía y Matemáticas in Burn GaInP Transistor Heterojunction MOCVD GaInP heterojunction bipolar transistor current gain stability V. Cabrera J. Mimila A. Morales R. Huerta Física, Astronomía y Matemáticas in Burn GaInP Transistor Heterojunction The evolution of the GaInP/GaAs hetero-junction bipolar transistor currents during the burn-in process is studied. We found that during the burn-in process all the diffusion currents decrease as a function of the stressing time. The simultaneously observed current gain increase is produced by a more important reduction on the hole current injected into the emitter. Such behavior can be explained by an empirical model that considers impurity reactivation at both sides of the emitter-base junction. Thus, to suppress the burn-in process the whole structure device should be hydrogen free. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201314 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| title | MOCVD GaInP heterojunction bipolar transistor current gain stability |
| topic | Física, Astronomía y Matemáticas in Burn GaInP Transistor Heterojunction |
| url | https://www.redalyc.org/articulo.oa?id=94201314 |