Grown of InTe films by close spaced vapor transport
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1876429139386302464 |
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| author | M. Melendez Lira |
| author_facet | M. Melendez Lira |
| contents | Grown of InTe films by close spaced vapor transport M. Melendez Lira O. Calzadilla Y. P. Mascarenhas M. Zapata Torres J. L. Peña R. Castro Rodríguez Física, Astronomía y Matemáticas Semiconductors ray diffraction Indium Telluride Raman spectroscopy InTe films were grown on glass substrates by close spaced vapor transport (CSVT) using evaporation of In2Te3. The composition of the films was investigated by Auger electron spectroscopy. The InTe films were investigated by X-ray diffraction using bragg-Bentano method. The application of the rietveld refinement patterns provides information about the crystallographic structure, lattice constants, atomic positions and bond lengths of the films. Optical characterization by Raman spectroscopy gave us further evidence of the success in the production of InTe films. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201318 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| format | Artículo científico |
| id | redalyc_94201318 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Grown of InTe films by close spaced vapor transport M. Melendez Lira Física, Astronomía y Matemáticas Semiconductors ray diffraction Indium Telluride Raman spectroscopy Grown of InTe films by close spaced vapor transport M. Melendez Lira O. Calzadilla Y. P. Mascarenhas M. Zapata Torres J. L. Peña R. Castro Rodríguez Física, Astronomía y Matemáticas Semiconductors ray diffraction Indium Telluride Raman spectroscopy InTe films were grown on glass substrates by close spaced vapor transport (CSVT) using evaporation of In2Te3. The composition of the films was investigated by Auger electron spectroscopy. The InTe films were investigated by X-ray diffraction using bragg-Bentano method. The application of the rietveld refinement patterns provides information about the crystallographic structure, lattice constants, atomic positions and bond lengths of the films. Optical characterization by Raman spectroscopy gave us further evidence of the success in the production of InTe films. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201318 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| title | Grown of InTe films by close spaced vapor transport |
| topic | Física, Astronomía y Matemáticas Semiconductors ray diffraction Indium Telluride Raman spectroscopy |
| url | https://www.redalyc.org/articulo.oa?id=94201318 |