GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1866814563042721792 |
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| author | Masao Tamura |
| author_facet | Masao Tamura |
| contents | GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE Masao Tamura Tokuo Yodo Máximo López Física, Astronomía y Matemáticas Si GaN Molecular beam epitaxy Transmission electron microscopy We have investigated the structure and quality of GaN films grown on a 2-3 nm thick amorphous SiN layer formed on (111) Si by electron cyclotron resonance plasma-assisted molecular beam epitaxy under various growth conditions by using both conventional and high-resolution transmission electron microscopy. It is shown that (0001) hexagonal GaN (-GaN) films are epitaxially grown on the above-mentioned substrates under optimum growth conditions. With the deviation of optimum conditions, GaN films present rough surface and are composed of small grains of an average size of 0.1 µm. Further, for the growth of decreased effective ratio of nitrogen radical molecules in nitrogen gas, the growth of cubic GaN is predominantly detected with -GaN. High density pure-edge threading dislocations observed in -GaN films are considered to be generated due to island-island coalescence at an early stage of growth. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201321 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| format | Artículo científico |
| id | redalyc_94201321 |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE Masao Tamura Física, Astronomía y Matemáticas Si GaN Molecular beam epitaxy Transmission electron microscopy GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE Masao Tamura Tokuo Yodo Máximo López Física, Astronomía y Matemáticas Si GaN Molecular beam epitaxy Transmission electron microscopy We have investigated the structure and quality of GaN films grown on a 2-3 nm thick amorphous SiN layer formed on (111) Si by electron cyclotron resonance plasma-assisted molecular beam epitaxy under various growth conditions by using both conventional and high-resolution transmission electron microscopy. It is shown that (0001) hexagonal GaN (-GaN) films are epitaxially grown on the above-mentioned substrates under optimum growth conditions. With the deviation of optimum conditions, GaN films present rough surface and are composed of small grains of an average size of 0.1 µm. Further, for the growth of decreased effective ratio of nitrogen radical molecules in nitrogen gas, the growth of cubic GaN is predominantly detected with -GaN. High density pure-edge threading dislocations observed in -GaN films are considered to be generated due to island-island coalescence at an early stage of growth. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201321 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| title | GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE |
| topic | Física, Astronomía y Matemáticas Si GaN Molecular beam epitaxy Transmission electron microscopy |
| url | https://www.redalyc.org/articulo.oa?id=94201321 |