Deviation from thermodynamic equilibrium at the initial stage of the GaN growth by metalorganic chemical vapor deposition (MOCVD)
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1876474009008209920 |
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| author | V.A. Elyukhin |
| author_facet | V.A. Elyukhin |
| contents | Deviation from thermodynamic equilibrium at the initial stage of the GaN growth by metalorganic chemical vapor deposition (MOCVD) V.A. Elyukhin G. García Salgado R. Peña Sierra Física, Astronomía y Matemáticas GaN MOCVD Epitaxy Adsorption process LT-MOCVD growth runs of GaN are conventionally used for the formation of the nucleation layers prior to epitaxial growth of GaN is substantially determined by the low temperature (LT) grown layers. Therefore, study of the LT runs is very important. One of the main concerns of the crystal growth is its driving force that is the affinity of the heterogeneous formation reaction of the GaN. The ratio between the affinity of the reaction and temperature in the energy units is the quantitative criterion of deviation from thermodynamic equilibrium whereby the ratio between the rates of the right and the back reactions can be estimated. LT-MOCVD of the GaN epilayers on both basal planes is presented. One and two variants of the GaN formation reactions on (0001) A and (0001) B planes, respectively, are described. Trimethylgallium and ammonia are considered as the precursors of the gallium and nitrogen, respectively. Decomposition of ammonia is presented as the catalitic reaction on the surface of the growing layer. The ratios between the affinity and temperature in the energy units are substantially larger than unity for crystallization processes on both planes. Thus, the considered formation reactions are far from thermodynamic equilibrium and, respectively, the rates of the back reactions are negligible small with comparison to the rates of the right reactions. Far from thermodynamic equilibrium growth conditions lead to formation of thermodynamically stable hexagonal and thermodynamically metastable cubic crystal modifications of GaN in the same growth process. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201325 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| format | Artículo científico |
| id | redalyc_94201325 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Deviation from thermodynamic equilibrium at the initial stage of the GaN growth by metalorganic chemical vapor deposition (MOCVD) V.A. Elyukhin Física, Astronomía y Matemáticas GaN MOCVD Epitaxy Adsorption process Deviation from thermodynamic equilibrium at the initial stage of the GaN growth by metalorganic chemical vapor deposition (MOCVD) V.A. Elyukhin G. García Salgado R. Peña Sierra Física, Astronomía y Matemáticas GaN MOCVD Epitaxy Adsorption process LT-MOCVD growth runs of GaN are conventionally used for the formation of the nucleation layers prior to epitaxial growth of GaN is substantially determined by the low temperature (LT) grown layers. Therefore, study of the LT runs is very important. One of the main concerns of the crystal growth is its driving force that is the affinity of the heterogeneous formation reaction of the GaN. The ratio between the affinity of the reaction and temperature in the energy units is the quantitative criterion of deviation from thermodynamic equilibrium whereby the ratio between the rates of the right and the back reactions can be estimated. LT-MOCVD of the GaN epilayers on both basal planes is presented. One and two variants of the GaN formation reactions on (0001) A and (0001) B planes, respectively, are described. Trimethylgallium and ammonia are considered as the precursors of the gallium and nitrogen, respectively. Decomposition of ammonia is presented as the catalitic reaction on the surface of the growing layer. The ratios between the affinity and temperature in the energy units are substantially larger than unity for crystallization processes on both planes. Thus, the considered formation reactions are far from thermodynamic equilibrium and, respectively, the rates of the back reactions are negligible small with comparison to the rates of the right reactions. Far from thermodynamic equilibrium growth conditions lead to formation of thermodynamically stable hexagonal and thermodynamically metastable cubic crystal modifications of GaN in the same growth process. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201325 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| title | Deviation from thermodynamic equilibrium at the initial stage of the GaN growth by metalorganic chemical vapor deposition (MOCVD) |
| topic | Física, Astronomía y Matemáticas GaN MOCVD Epitaxy Adsorption process |
| url | https://www.redalyc.org/articulo.oa?id=94201325 |