Er-doped CdS thin films: electrical characterization
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| Format: | Artículo científico |
| Langue: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| _version_ | 1876459540961034240 |
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| author | O. Portillo Moreno |
| author_facet | O. Portillo Moreno |
| contents | Er-doped CdS thin films: electrical characterization O. Portillo Moreno R. Lozada Morales M. Rubín Falfán J. A. Rivera Márquez M. R. Palomino Merino O. Zelaya Angel Física, Astronomía y Matemáticas Thin film Doped layers Semiconductor Electrical properties Cadmium sulfide thin films were prepared by chemical bath on glass substrates at 80ºC. CdS was Er-doped during the growth process by adding water-diluted Er(NO3)3.3H2O to the growing aqueous solution. The relative volume of the doping solution was varied in order to obtain different doping levels. Crystalline structure of CdS:Er layers was cubic zincblende for all the doped-layers prepared. The (111) interplanar distance changes in irregular way with the Er doping level. Consequently, the energy band gap (Eg) firstly increases and afterward diminishes becoming, at last, approximately constant at around Eg = 2.37 eV. For higher doping levels, in as-grown films, dark electrical conductivity () values reach about 1.8 x 10-2 -1cm-1 at room temperature. Logarithm of versus 1/kT curves, where k is the Boltzmanns constant and T the absolute temperature, indicate an effective doping of CdS as a result of the Er introduction into the lattice of the material. Thermoelectric power measurements reveal an n-type doping with 1.1 x 1018 cm-3 as maximum carrier density. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201331 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| format | Artículo científico |
| id | redalyc_94201331 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Er-doped CdS thin films: electrical characterization O. Portillo Moreno Física, Astronomía y Matemáticas Thin film Doped layers Semiconductor Electrical properties Er-doped CdS thin films: electrical characterization O. Portillo Moreno R. Lozada Morales M. Rubín Falfán J. A. Rivera Márquez M. R. Palomino Merino O. Zelaya Angel Física, Astronomía y Matemáticas Thin film Doped layers Semiconductor Electrical properties Cadmium sulfide thin films were prepared by chemical bath on glass substrates at 80ºC. CdS was Er-doped during the growth process by adding water-diluted Er(NO3)3.3H2O to the growing aqueous solution. The relative volume of the doping solution was varied in order to obtain different doping levels. Crystalline structure of CdS:Er layers was cubic zincblende for all the doped-layers prepared. The (111) interplanar distance changes in irregular way with the Er doping level. Consequently, the energy band gap (Eg) firstly increases and afterward diminishes becoming, at last, approximately constant at around Eg = 2.37 eV. For higher doping levels, in as-grown films, dark electrical conductivity () values reach about 1.8 x 10-2 -1cm-1 at room temperature. Logarithm of versus 1/kT curves, where k is the Boltzmanns constant and T the absolute temperature, indicate an effective doping of CdS as a result of the Er introduction into the lattice of the material. Thermoelectric power measurements reveal an n-type doping with 1.1 x 1018 cm-3 as maximum carrier density. 2001 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201331 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.13 |
| title | Er-doped CdS thin films: electrical characterization |
| topic | Física, Astronomía y Matemáticas Thin film Doped layers Semiconductor Electrical properties |
| url | https://www.redalyc.org/articulo.oa?id=94201331 |