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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2002
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| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=94201505 |
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Inhaltsangabe:
- Transition from CdS to CdCO3 by deposition temperature influence A. B Soto H. Lima Lima R. Palomino Merino R. Lozada Morales O. Portillo Moreno O. Zelaya Angel Física, Astronomía y Matemáticas Semiconductors Chemical synthesis Light absorption and reflection Thin films of cadmium carbonate (CdCO3) and cadmium sulfide (CdS) were grown onto glass, substrates by means of thechemical bath (CB) method. The temperature of the bath (Td) was selected in the interval 23 - 80 oC. At low temperatures,CdCO3 is the compound predominant in the layers. At high temperatures CdS is the compound deposited on the substrate.At intermediate Td-values a mixture of both materials are present, i.e., the gradual transition from an insulator (CdCO3) toa semiconductor (CdS) growth occurs when Td increases. Physical properties of films were studied by means of X-raydiffraction, and optical absorption. The forbidden energy band gap of direct transitions (Eg) was calculated by applyingthe a2 µ (hn - Eg) relation to the optical absorption spectra 2002 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201505 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.15