Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2002
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| _version_ | 1876460806065881088 |
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| author | J. Díaz Reyes |
| author_facet | J. Díaz Reyes |
| contents | Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic J. Díaz Reyes R. Castillo Ojeda M. Galván Arellano R. Peña Sierra Física, Astronomía y Matemáticas MOCVD AlGaAs Hall Effect Raman Spectroscopy MOCVD AlGaAs thin films were characterized using Raman and Hall measurements. The AlGaAs thin films were grownby MOCVD using metallic arsenic instead of arsine as the arsenic precursor. Some difficulties in the growth of AlGaAsby MOCVD are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growthprocess. The composition homogeneity of the films was demonstrated by the Raman measurements. Hall measurementson the samples showed highly compensated material. Samples grown at temperatures lower than 750°C were highlyresistive. Independently of the V/III ratio; the samples grown at higher temperatures were n-type. As the growthtemperature is increased the layers compensation decreases but the Raman spectra show the layers become moredefective 2002 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201506 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.15 |
| format | Artículo científico |
| id | redalyc_94201506 |
| institution | Redalyc |
| language | en |
| publishDate | 2002 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic J. Díaz Reyes Física, Astronomía y Matemáticas MOCVD AlGaAs Hall Effect Raman Spectroscopy Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic J. Díaz Reyes R. Castillo Ojeda M. Galván Arellano R. Peña Sierra Física, Astronomía y Matemáticas MOCVD AlGaAs Hall Effect Raman Spectroscopy MOCVD AlGaAs thin films were characterized using Raman and Hall measurements. The AlGaAs thin films were grownby MOCVD using metallic arsenic instead of arsine as the arsenic precursor. Some difficulties in the growth of AlGaAsby MOCVD are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growthprocess. The composition homogeneity of the films was demonstrated by the Raman measurements. Hall measurementson the samples showed highly compensated material. Samples grown at temperatures lower than 750°C were highlyresistive. Independently of the V/III ratio; the samples grown at higher temperatures were n-type. As the growthtemperature is increased the layers compensation decreases but the Raman spectra show the layers become moredefective 2002 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201506 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.15 |
| title | Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic |
| topic | Física, Astronomía y Matemáticas MOCVD AlGaAs Hall Effect Raman Spectroscopy |
| url | https://www.redalyc.org/articulo.oa?id=94201506 |