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Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic

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Détails bibliographiques
Auteur principal:	J. Díaz Reyes
Format:	Artículo científico
Langue:	en
Publié:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2002
Sujets:	Física, Astronomía y Matemáticas MOCVD AlGaAs Hall Effect Raman Spectroscopy
Accès en ligne:	Acceder al recurso
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