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Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic

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Bibliographic Details
Main Author:	J. Díaz Reyes
Format:	Artículo científico
Language:	en
Published:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2002
Subjects:	Física, Astronomía y Matemáticas MOCVD AlGaAs Hall Effect Raman Spectroscopy
Online Access:	Acceder al recurso
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