Salvato in:
| Autore principale: | |
|---|---|
| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2002
|
| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94201510 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
Sommario:
- Restrained relaxation of stress in a MBE-grown thin film of CaF2 on (111) silicon E. Torres Tapia A. Tempel A. Zehe A. Ramírez Física, Astronomía y Matemáticas silicon Thin films Heteroepitaxy Epitaxial growth Molecular Beam Epitaxy A rhombohedral symmetry of CaF2, grown by MBE on (111)Si to a thickness of 30 nm was found with the help of RBSand ion channeling measurements. This symmetry is caused by hampered stress relaxation and the build-up of planarstrain of tensile type due to different thermal expansion coefficients of the deposit and the substrate on the one hand, anddislocation pinning during the cooling process of the sample, on the other. The strain field forces the epitaxial film to arhombohedral instead of cubic structure, and a total misfit of 1.2% is generated, instead of the common 0.6% 2002 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94201510 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.15