Mandelis, A. (1999). Evidence of a surface acceptor state in undoped semi-insulating GaAs by photothermal radiometric deep level transient spectroscopy. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
Chicago Style (17th ed.) CitationMandelis, Andreas. Evidence of a Surface Acceptor State in Undoped Semi-insulating GaAs by Photothermal Radiometric Deep Level Transient Spectroscopy. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C, 1999.
MLA (9th ed.) CitationMandelis, Andreas. Evidence of a Surface Acceptor State in Undoped Semi-insulating GaAs by Photothermal Radiometric Deep Level Transient Spectroscopy. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C, 1999.
Warning: These citations may not always be 100% accurate.