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Improving the electrical properties of non- intentionally doped n-GaN by deuteration

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Bibliographic Details
Main Author:	J. Mimila-Arroyo
Format:	Artículo científico
Language:	en
Published:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2010
Subjects:	Física, Astronomía y Matemáticas Deuteration Passivation Gallium nitride
Online Access:	Acceder al recurso
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