New device applications of SiGe heterostructures
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
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| _version_ | 1876467360165003264 |
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| author | Shiraki Yasuhiro |
| author_facet | Shiraki Yasuhiro |
| contents | New device applications of SiGe heterostructures Shiraki Yasuhiro Física, Astronomía y Matemáticas FETs Ge MOS SiGe Heteroestructures Heterostructure bipolar transistors SiGe heterostructure bipolar transistors are well developed and some of them are now commercially available, whilemany efforts are being paid on field-effect transistors. Extremely high mobility is demonstrated both for n- and p-channeltransistors, which is brought by strain effects, and new devices compatible to Si LSIs are now under development. Opticaldevices based on Si substrates are also extensively studied by employing SiGe heterostructures. After reviewing thesedevice applications, the future prospect of SiGe heterostructures is discussed 2003 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94216401 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.4 Vol.16 |
| format | Artículo científico |
| id | redalyc_94216401 |
| institution | Redalyc |
| language | en |
| publishDate | 2003 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | New device applications of SiGe heterostructures Shiraki Yasuhiro Física, Astronomía y Matemáticas FETs Ge MOS SiGe Heteroestructures Heterostructure bipolar transistors New device applications of SiGe heterostructures Shiraki Yasuhiro Física, Astronomía y Matemáticas FETs Ge MOS SiGe Heteroestructures Heterostructure bipolar transistors SiGe heterostructure bipolar transistors are well developed and some of them are now commercially available, whilemany efforts are being paid on field-effect transistors. Extremely high mobility is demonstrated both for n- and p-channeltransistors, which is brought by strain effects, and new devices compatible to Si LSIs are now under development. Opticaldevices based on Si substrates are also extensively studied by employing SiGe heterostructures. After reviewing thesedevice applications, the future prospect of SiGe heterostructures is discussed 2003 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94216401 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.4 Vol.16 |
| title | New device applications of SiGe heterostructures |
| topic | Física, Astronomía y Matemáticas FETs Ge MOS SiGe Heteroestructures Heterostructure bipolar transistors |
| url | https://www.redalyc.org/articulo.oa?id=94216401 |