Charge trapping phenomenon in Al/SRO/Al on Si structure by lateral electrical stress
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
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| _version_ | 1876450102057369600 |
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| author | Yu Zhenrui |
| author_facet | Yu Zhenrui |
| contents | Charge trapping phenomenon in Al/SRO/Al on Si structure by lateral electrical stress Yu Zhenrui Jesús Carrillo Fracisco Flores Mariano Aceves Física, Astronomía y Matemáticas Charge trapping CV measurements Si nanocrystals Silicon rich oxide Lateral electrical stress In this article, the observation of charge trapping effect of silicon rich oxide (SRO) layer in an Al/SRO/Al on Si structureby lateral electrical stress is reported. The density of trapped charges depends on the deposition and post-treatmentconditions of the SRO layer. For the Al/SRO/Al structure grown on n-Si substrates, positive trapped charges wereobserved. A model is proposed to interpret the experimental results 2003 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94216406 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.4 Vol.16 |
| format | Artículo científico |
| id | redalyc_94216406 |
| institution | Redalyc |
| language | en |
| publishDate | 2003 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Charge trapping phenomenon in Al/SRO/Al on Si structure by lateral electrical stress Yu Zhenrui Física, Astronomía y Matemáticas Charge trapping CV measurements Si nanocrystals Silicon rich oxide Lateral electrical stress Charge trapping phenomenon in Al/SRO/Al on Si structure by lateral electrical stress Yu Zhenrui Jesús Carrillo Fracisco Flores Mariano Aceves Física, Astronomía y Matemáticas Charge trapping CV measurements Si nanocrystals Silicon rich oxide Lateral electrical stress In this article, the observation of charge trapping effect of silicon rich oxide (SRO) layer in an Al/SRO/Al on Si structureby lateral electrical stress is reported. The density of trapped charges depends on the deposition and post-treatmentconditions of the SRO layer. For the Al/SRO/Al structure grown on n-Si substrates, positive trapped charges wereobserved. A model is proposed to interpret the experimental results 2003 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94216406 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.4 Vol.16 |
| title | Charge trapping phenomenon in Al/SRO/Al on Si structure by lateral electrical stress |
| topic | Física, Astronomía y Matemáticas Charge trapping CV measurements Si nanocrystals Silicon rich oxide Lateral electrical stress |
| url | https://www.redalyc.org/articulo.oa?id=94216406 |