Critical thickness of Ge / GaAs(001) epitaxial films
Fuente:
Redalyc
Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1876440738611331072 |
|---|---|
| author | A. G. Rodríguez |
| author_facet | A. G. Rodríguez |
| contents | Critical thickness of Ge / GaAs(001) epitaxial films A. G. Rodríguez A. Navarro Quezada G. Hernández Sosa M. A. Vidal H. Navarro Contreras Física, Astronomía y Matemáticas III critical thinks ray diffraction High resolution X Heterostructure IV Epitaxial single crystal films of Ge, with thickness from 0.2 to 2.4 µm, were grown on GaAs (001) by rf sputtering. Theselayers were characterized by High Resolution X-Ray Diffraction (HRXRD). Measured rocking curves show thatpseudomorphic samples with good structural quality can be obtained by this growth technique. Asymmetrical reflections(115) and (-1-15) are used to determine the in-plane and in-growth lattice parameters of the grown films. From thebehavior of these parameters and Ge diffraction peak broadening, with the layer thickness, an experimental value of 1.8µm is obtained for the critical thickness of Ge grown on GaAs (001) 2003 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94216410 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.4 Vol.16 |
| format | Artículo científico |
| id | redalyc_94216410 |
| institution | Redalyc |
| language | en |
| publishDate | 2003 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Critical thickness of Ge / GaAs(001) epitaxial films A. G. Rodríguez Física, Astronomía y Matemáticas III critical thinks ray diffraction High resolution X Heterostructure IV Critical thickness of Ge / GaAs(001) epitaxial films A. G. Rodríguez A. Navarro Quezada G. Hernández Sosa M. A. Vidal H. Navarro Contreras Física, Astronomía y Matemáticas III critical thinks ray diffraction High resolution X Heterostructure IV Epitaxial single crystal films of Ge, with thickness from 0.2 to 2.4 µm, were grown on GaAs (001) by rf sputtering. Theselayers were characterized by High Resolution X-Ray Diffraction (HRXRD). Measured rocking curves show thatpseudomorphic samples with good structural quality can be obtained by this growth technique. Asymmetrical reflections(115) and (-1-15) are used to determine the in-plane and in-growth lattice parameters of the grown films. From thebehavior of these parameters and Ge diffraction peak broadening, with the layer thickness, an experimental value of 1.8µm is obtained for the critical thickness of Ge grown on GaAs (001) 2003 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94216410 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.4 Vol.16 |
| title | Critical thickness of Ge / GaAs(001) epitaxial films |
| topic | Física, Astronomía y Matemáticas III critical thinks ray diffraction High resolution X Heterostructure IV |
| url | https://www.redalyc.org/articulo.oa?id=94216410 |