Caracterización de substratos de silicio de alta y baja resistividad mediante la estructura Al/SRO/Si y comparación con técnicas utilizando estructuras MOS
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| Format: | Artículo científico |
| Langue: | es |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2004
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| _version_ | 1876440258301657088 |
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| author | O. Malik |
| author_facet | O. Malik |
| contents | Caracterización de substratos de silicio de alta y baja resistividad mediante la estructura Al/SRO/Si y comparación con técnicas utilizando estructuras MOS O. Malik J. A. Luna M. Aceves Física, Astronomía y Matemáticas MOS SiO2 Lifetime V characteristics High and low frequency C Nowadays Si high Resistivity substrates (Nd<1014 cm-3) are commonly used, especially in optoelectronic integrated circuits. However, standard MOS characterization methods fail to predict correctly the impurity density and the generation life time. This is due to the high resistance in series with the MOS capacitor produced by the high Resistivity of the Si substrate. To overcome this restriction, different characterization methods are proposed.In this work low and high resistive silicon substrates are characterized using new methods. The standard MOSmaximum/minimum capacitance method cannot be used to characterize high Resistivity substrates, and then amodification using low/high frequency C-V measurements is proposed. Also, using the Al/SRO/Si structure the impurity density and the lifetime is estimated. The results for both type of substrates and for the different methods are compared. It is shown that the results are similar and any of these methods produce reliable result, but the Al/SRO/Si structure has theadvantage that the generation lifetime is easily obtained. 2004 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94217201 es http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.2 Vol.17 |
| format | Artículo científico |
| id | redalyc_94217201 |
| institution | Redalyc |
| language | es |
| publishDate | 2004 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Caracterización de substratos de silicio de alta y baja resistividad mediante la estructura Al/SRO/Si y comparación con técnicas utilizando estructuras MOS O. Malik Física, Astronomía y Matemáticas MOS SiO2 Lifetime V characteristics High and low frequency C Caracterización de substratos de silicio de alta y baja resistividad mediante la estructura Al/SRO/Si y comparación con técnicas utilizando estructuras MOS O. Malik J. A. Luna M. Aceves Física, Astronomía y Matemáticas MOS SiO2 Lifetime V characteristics High and low frequency C Nowadays Si high Resistivity substrates (Nd<1014 cm-3) are commonly used, especially in optoelectronic integrated circuits. However, standard MOS characterization methods fail to predict correctly the impurity density and the generation life time. This is due to the high resistance in series with the MOS capacitor produced by the high Resistivity of the Si substrate. To overcome this restriction, different characterization methods are proposed.In this work low and high resistive silicon substrates are characterized using new methods. The standard MOSmaximum/minimum capacitance method cannot be used to characterize high Resistivity substrates, and then amodification using low/high frequency C-V measurements is proposed. Also, using the Al/SRO/Si structure the impurity density and the lifetime is estimated. The results for both type of substrates and for the different methods are compared. It is shown that the results are similar and any of these methods produce reliable result, but the Al/SRO/Si structure has theadvantage that the generation lifetime is easily obtained. 2004 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94217201 es http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.2 Vol.17 |
| title | Caracterización de substratos de silicio de alta y baja resistividad mediante la estructura Al/SRO/Si y comparación con técnicas utilizando estructuras MOS |
| topic | Física, Astronomía y Matemáticas MOS SiO2 Lifetime V characteristics High and low frequency C |
| url | https://www.redalyc.org/articulo.oa?id=94217201 |