Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2005
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| author | A. Yu Gorbachev |
| author_facet | A. Yu Gorbachev |
| contents | Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots A. Yu Gorbachev V. H. Méndez-García A. Lastras-Martínez V.A. Mishurnyi F. De Anda M. López-López M. Calixto-Rodríguez Física, Astronomía y Matemáticas V materials Quantum dots Nanostructures Semiconducting III Molecular beam epitaxy We studied the growth of self assembled InAs quantum dots (QDs) on GaAs (100) surfaces subjected to an in situ annealing treatment. The treatment consists in exposing the GaAs buffer layer surface at a high temperature for a few seconds with the As4- shutter closed. The exposure of GaAs at high temperature leads to the formation of nanometric scale pits plus a Ga-rich surface. The annealing modifies in such a way the GaAs surface that the strain mediated transition from two- to three dimensional InAs growth takes place at a much larger InAs thickness than the obtained under standard conditions. Moreover, the resulting QDs obtained at the equivalent InAs hickness of 3.4 monolayers (MLs) on the annealed GaAs surfaces presented a smaller size dispersion as compared with the conventionally grown QDs. The photoluminescence (PL) emission spectra corresponding to the samples subjected to the in-situ thermal treatment observed a reduction in the full width at half medium (FWHM) and a clear correlation between the dots size increase and the emission peak red shift. The new-flanged nucleation propitiated by the annealing process was explained in terms of a generation of an intermediated InGaAs thin film created by Ga-clusters on an atomically rough surface and the impinging In atoms. 2005 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94218201 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.2 Vol.18 |
| format | Artículo científico |
| id | redalyc_94218201 |
| institution | Redalyc |
| language | en |
| publishDate | 2005 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots A. Yu Gorbachev Física, Astronomía y Matemáticas V materials Quantum dots Nanostructures Semiconducting III Molecular beam epitaxy Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots A. Yu Gorbachev V. H. Méndez-García A. Lastras-Martínez V.A. Mishurnyi F. De Anda M. López-López M. Calixto-Rodríguez Física, Astronomía y Matemáticas V materials Quantum dots Nanostructures Semiconducting III Molecular beam epitaxy We studied the growth of self assembled InAs quantum dots (QDs) on GaAs (100) surfaces subjected to an in situ annealing treatment. The treatment consists in exposing the GaAs buffer layer surface at a high temperature for a few seconds with the As4- shutter closed. The exposure of GaAs at high temperature leads to the formation of nanometric scale pits plus a Ga-rich surface. The annealing modifies in such a way the GaAs surface that the strain mediated transition from two- to three dimensional InAs growth takes place at a much larger InAs thickness than the obtained under standard conditions. Moreover, the resulting QDs obtained at the equivalent InAs hickness of 3.4 monolayers (MLs) on the annealed GaAs surfaces presented a smaller size dispersion as compared with the conventionally grown QDs. The photoluminescence (PL) emission spectra corresponding to the samples subjected to the in-situ thermal treatment observed a reduction in the full width at half medium (FWHM) and a clear correlation between the dots size increase and the emission peak red shift. The new-flanged nucleation propitiated by the annealing process was explained in terms of a generation of an intermediated InGaAs thin film created by Ga-clusters on an atomically rough surface and the impinging In atoms. 2005 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94218201 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.2 Vol.18 |
| title | Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots |
| topic | Física, Astronomía y Matemáticas V materials Quantum dots Nanostructures Semiconducting III Molecular beam epitaxy |
| url | https://www.redalyc.org/articulo.oa?id=94218201 |