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Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots

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Dettagli Bibliografici
Autore principale:	A. Yu Gorbachev
Natura:	Artículo científico
Lingua:	en
Pubblicazione:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2005
Soggetti:	Física, Astronomía y Matemáticas V materials Quantum dots Nanostructures Semiconducting III Molecular beam epitaxy
Accesso online:	Acceder al recurso
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