Semiconductor thin films grown by RF-co-sputtering of CdTe and Al targets
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| Format: | Artículo científico |
| Langue: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2005
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| _version_ | 1876481405690576896 |
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| author | M. Becerril-Silva |
| author_facet | M. Becerril-Silva |
| contents | Semiconductor thin films grown by RF-co-sputtering of CdTe and Al targets M. Becerril-Silva S. Jiménez-Sandoval M. Melendez-Lira M. Zapata-Torres A. Mendoza-Galván Física, Astronomía y Matemáticas Semiconductor alloys Optical characterization Ordered defect semiconductors CdTe is a direct bandgap semiconductor with important applications in radiation detection and photovoltaic devices. However, as any material, it has some limitations. For instance, in the photovoltaic heterostructure CdTe/CdS, among the limiting factors we may mention the difference between the cubic and the hexagonal crystallographic structures of each one of the heterostructure components and the difficulty to obtain p-type CdTe. Some of the limitations found in these systems could be surmounted by producing new materials based on CdTe. In this work we report results on the synthesis and characterization of thin films of the material Cd1-xAlxTe. This alloy is proposed based on the existence of the compounds Al2Te3 and CdAl2Te4. The semiconductors Al2Te3 and CdAl2Te4 are part of the family of vacancy ordered semiconductors formed by elements of columns II, III and VI and can be described with the general chemical formulas: AIIBIII2CVI4 for ternary compounds and BIII2CVI3for binary compounds. We have produced thin films of Cd1-xAlxTe by RF co-sputtering employing CdTe and Al targets under an Ar atmosphere. Al content was controlled by the RF power applied to the Al magnetron. The samples presented hexagonal structure as was determined by x ray diffraction. An increase in the bandgap depending on the Al content was found and values up to 1.64 eV for 3% of Al content were obtained by photoreflectance spectroscopy. The direct bandgap property is established beyond any doubt by the presence of a clear photoreflectance signal. Ellipsometry measurements show changes in CdTe-like critical points energies as result of aluminum incorporation. Electrical characterization results showed that samples present the typical characteristics of semiconductor behavior. 2005 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94218306 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.3 Vol.18 |
| format | Artículo científico |
| id | redalyc_94218306 |
| institution | Redalyc |
| language | en |
| publishDate | 2005 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Semiconductor thin films grown by RF-co-sputtering of CdTe and Al targets M. Becerril-Silva Física, Astronomía y Matemáticas Semiconductor alloys Optical characterization Ordered defect semiconductors Semiconductor thin films grown by RF-co-sputtering of CdTe and Al targets M. Becerril-Silva S. Jiménez-Sandoval M. Melendez-Lira M. Zapata-Torres A. Mendoza-Galván Física, Astronomía y Matemáticas Semiconductor alloys Optical characterization Ordered defect semiconductors CdTe is a direct bandgap semiconductor with important applications in radiation detection and photovoltaic devices. However, as any material, it has some limitations. For instance, in the photovoltaic heterostructure CdTe/CdS, among the limiting factors we may mention the difference between the cubic and the hexagonal crystallographic structures of each one of the heterostructure components and the difficulty to obtain p-type CdTe. Some of the limitations found in these systems could be surmounted by producing new materials based on CdTe. In this work we report results on the synthesis and characterization of thin films of the material Cd1-xAlxTe. This alloy is proposed based on the existence of the compounds Al2Te3 and CdAl2Te4. The semiconductors Al2Te3 and CdAl2Te4 are part of the family of vacancy ordered semiconductors formed by elements of columns II, III and VI and can be described with the general chemical formulas: AIIBIII2CVI4 for ternary compounds and BIII2CVI3for binary compounds. We have produced thin films of Cd1-xAlxTe by RF co-sputtering employing CdTe and Al targets under an Ar atmosphere. Al content was controlled by the RF power applied to the Al magnetron. The samples presented hexagonal structure as was determined by x ray diffraction. An increase in the bandgap depending on the Al content was found and values up to 1.64 eV for 3% of Al content were obtained by photoreflectance spectroscopy. The direct bandgap property is established beyond any doubt by the presence of a clear photoreflectance signal. Ellipsometry measurements show changes in CdTe-like critical points energies as result of aluminum incorporation. Electrical characterization results showed that samples present the typical characteristics of semiconductor behavior. 2005 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94218306 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.3 Vol.18 |
| title | Semiconductor thin films grown by RF-co-sputtering of CdTe and Al targets |
| topic | Física, Astronomía y Matemáticas Semiconductor alloys Optical characterization Ordered defect semiconductors |
| url | https://www.redalyc.org/articulo.oa?id=94218306 |