Cover Image

Study of InxGa1-xN layers growth on GaN/Al2O3 by MOCVD at different pressures

Fuente: Redalyc

Saved in:

Bibliographic Details
Main Author:	C. Guarneros
Format:	Artículo científico
Language:	en
Published:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2013
Subjects:	Física, Astronomía y Matemáticas InxGa1 xN alloys XRD patterns vegard’s law growth pressure
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Structural, optical and morphological properties of InxGa1-xAs layers o btained by RF magnetron sputtering
by: A. Pulzara-Mora
Published: (2016)

First-principles calculations of the structural and electronics properties of YInN alloy
by: G. Patricia Abdel Rahim-Garzón
Published: (2021)

Optical and electrical characterization of AlxGa1−xAs layers grown on GaAs obtained by a metallic-arsenic-based-MOCVD system
by: J. Díaz-Reyes
Published: (2007)

Ab initio calculation of structural and electronic properties of AlxGa1-xN and InxGa1-xN alloys
by: E. López-Apreza
Published: (2010)

Estudio de Confiabilidad en Diodos Basados en AlGaN/GaN Durante el Estado de Encendido
by: Eliana Acurio
Published: (2022)

Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering
by: D. M. G. Leite
Published: (2006)

France GaN Charger Market Analysis
by: Next Move Strategy Consulting
Published: (2025)

India GaN Charger Market Analysis
by: Next Move Strategy Consulting
Published: (2025)

Structural and optical characterization of Inx Ga1-xN nano-structured grown by chemical vapor deposition
by: A. Ramos-Carrazco
Published: (2011)

Phase dependence of the Thermal Memory Effect in Polycrystalline Ribbon and Bulk Ni55Fe19Ga26 Heusler Alloys
by: Vidal-Crespo, Antonio, et al.
Published: (2025)

Phase dependence of the Thermal Memory Effect in Polycrystalline Ribbon and Bulk Ni55Fe19Ga26 Heusler Alloys
by: Vidal-Crespo, Antonio, et al.
Published: (2025)

Estudio teórico del ferromagnetismo en la superred (VN)1 /(GaN)3
by: Rafael González-Hernández
Published: (2012)

Effect of GaN substrate thickness on the optical field of InGaN laser diodes
by: J. A. Martín
Published: (2018)

Deviation from thermodynamic equilibrium at the initial stage of the GaN growth by metalorganic chemical vapor deposition (MOCVD)
by: V.A. Elyukhin
Published: (2001)

Unstable states of InxAlyGa1-x-yN quaternary alloys
by: S.F. Díaz Albarrán
Published: (2010)

KINETIC STUDY OF THE CRYSTALLIZATION PROCESS OF THE α-Fe PHASE IN THE AMORPHOUS Fe 81 B 13 Si 4 C2 ALLOY
by: Bojan Ž. Janković
Published: (2014)

Optical properties of Er-doped GaN
by: Akihiro Wakahara
Published: (2007)

Estudio por primeros principios de las propiedades estructurales y electrónicas de la multicapa CrN/GaN
by: Ricardo Eulises Báez Cruz
Published: (2013)

GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate
by: Pengan Li
Published: (2016)

Refractive index expressions for Ga1-x lnxAs, GaAs1-xNx and Ga1-xlnxNyAs1-y alloys
by: J.A. Martín
Published: (2015)

Dehidroisomerización de n-butano sobre catalizadores bifuncionales tipo Al-MCM-41 y Ga-MCM-41 impregnados con Pt o Ga
by: Francisco J. Machado
Published: (2006)

GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE
by: Masao Tamura
Published: (2001)

Raman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD
by: J. Díaz-Reyes
Published: (2010)

Spinodal decomposition ranges of Inx Ga1-x Ny P1-y and GaAsx Ny P1-x-y alloys
by: S. F. Díaz Albarrán
Published: (2007)

Efectos de los contactos eléctricos en dispositivos de efecto hall cuántico basados en heteroestructuras AlGaAs/GaAs
by: V. H. Méndez García
Published: (2004)

Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic
by: J. Díaz Reyes
Published: (2002)

MOCVD GaInP heterojunction bipolar transistor current gain stability
by: V. Cabrera
Published: (2001)

Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires
by: Elena Cimpoiasu
Published: (2006)

Characterization of highly doped Ga 0.86 In 0.14 As 0.13 Sb0.87 grown by liquid phase epitaxy
by: J. Díaz-Reyes
Published: (2017)

Magnetopolaron Effects on the Intradonor 1s-2p+ Transition Energies in a GaAs - AlGaAs Double Quantum Well
by: Paulo C. M. Machado
Published: (2006)

Theory of Hydrogen Complexes in MnxGa1-xAs Dilute Magnetic Semiconductors
by: P. Giannozzi
Published: (2006)

Propiedades estructurales, electrónicas y magnéticas de la multicapa MnN/GaN: un estudio ab initio
by: Miguel Espitia Rico
Published: (2013)

Electron-Phonon Scattering in Graded Quantum Dots
by: G. S. Diniz
Published: (2006)

First-principles calculation of the band gap of AlxGa1¡-xN and InxGa1¡-xN
by: Roberto Núñez-González
Published: (2008)

Magnetic Features of Nd2Fe17-xMx (M = Ga, Mn) Compounds
by: P.K. Dager
Published: (2012)

Adsorción e incorporación de Cu en la superficie GaN(0001)
by: J. Alberto Nieto
Published: (2012)

Structural and hyperfine study of the (Fe60 Al40 )100−X NbX nanostructured system
by: J.A. Velasco Jaramillo
Published: (2012)

Spinodal decomposition ranges of AlxGa1¡xNyP1¡y and AlxGa1¡xNySb1¡y alloys
by: S.F. Díaz Albarrán
Published: (2005)

Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP
by: D. O. Toginho Filho
Published: (2006)

Monte Carlo simulation of epitaxial growth of GaInAsSb films
by: Jheison Alejandro Morales
Published: (2014)