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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2014
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| Accesso online: | https://www.redalyc.org/articulo.oa?id=94233003005 |
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| _version_ | 1866588159797624832 |
|---|---|
| author | R. Bernal Correa |
| author_facet | R. Bernal Correa |
| contents | Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering R. Bernal Correa J. Montes Monsalve A. Pulzara Mora M. López López A. Cruz Orea J.A. Cardona Física, Astronomía y Matemáticas Gallium arsenide Raman microscopy RF magnetron sputtering Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional analysis was performed by means of energy dispersive X-ray spectroscopy (EDS), in order to obtain information of the atomic percentages of the elements and their spatial distribution in the samples. The optical properties of the layers are discussed from the results of UV-Vis absorption, and Photoacoustic spectroscopy (PAS). Finally, the Raman shift of the GaAs phonon modes are studied as function of the penetration depth of laser wavelength used to excite the sample on Raman microscopy. 2014 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94233003005 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.3 Vol.27 |
| format | Artículo científico |
| id | redalyc_94233003005 |
| language | en |
| publishDate | 2014 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering R. Bernal Correa Física, Astronomía y Matemáticas Gallium arsenide Raman microscopy RF magnetron sputtering Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering R. Bernal Correa J. Montes Monsalve A. Pulzara Mora M. López López A. Cruz Orea J.A. Cardona Física, Astronomía y Matemáticas Gallium arsenide Raman microscopy RF magnetron sputtering Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional analysis was performed by means of energy dispersive X-ray spectroscopy (EDS), in order to obtain information of the atomic percentages of the elements and their spatial distribution in the samples. The optical properties of the layers are discussed from the results of UV-Vis absorption, and Photoacoustic spectroscopy (PAS). Finally, the Raman shift of the GaAs phonon modes are studied as function of the penetration depth of laser wavelength used to excite the sample on Raman microscopy. 2014 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94233003005 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.3 Vol.27 |
| title | Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering |
| topic | Física, Astronomía y Matemáticas Gallium arsenide Raman microscopy RF magnetron sputtering |
| url | https://www.redalyc.org/articulo.oa?id=94233003005 |