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| Format: | Artículo científico |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2016
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| author | A. Pulzara-Mora |
| author_facet | A. Pulzara-Mora |
| contents | Structural, optical and morphological properties of InxGa1-xAs layers o btained by RF magnetron sputtering A. Pulzara-Mora J. Montes-Monsalve R. Bernal-Correa A. Morales-Acevedo S. Gallardo-Hernández M. López-López Física, Astronomía y Matemáticas SIMS InGaAs RF magnetron sputtering Semiconducting ternary alloys Indium gallium arsenide layers (In x Ga 1 - x As) were prepared on Silicon (100) and glass substrates in an argon atmosphere by R.F. magnetron sputtering. The growth temperature was 580 °C and high purity targets of gallium arsenide and indium were used. The effects due to the RF power for the In sput tering and the substrate type on the deposited films were studied by X - ray diffraction and Raman microscopy. These studies revealed the formation of In x Ga 1 - x As with the zinc - blende phase. The results also show that at low In sputtering RF power, there is a preferential growth along of (111) direction. Morphology and thickness of the layers were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), revealing a variation of particle size and roughness. Energy dispersive spectroscopy (EDS) allowed us to determine the atomic percentages of In, Ga, and As. These results are in agreement with Raman measurements, where GaAs - like and InAs - like LO and TO vibrational modes were observed with a shift attributed to the indium concentrations in the InxGa1 - xAs layers. By secondary ion mass spectroscopy (SIMS), the interface quality was studied. 2016 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94246523001 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.2 Vol.29 |
| format | Artículo científico |
| id | redalyc_94246523001 |
| language | en |
| publishDate | 2016 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Structural, optical and morphological properties of InxGa1-xAs layers o btained by RF magnetron sputtering A. Pulzara-Mora Física, Astronomía y Matemáticas SIMS InGaAs RF magnetron sputtering Semiconducting ternary alloys Structural, optical and morphological properties of InxGa1-xAs layers o btained by RF magnetron sputtering A. Pulzara-Mora J. Montes-Monsalve R. Bernal-Correa A. Morales-Acevedo S. Gallardo-Hernández M. López-López Física, Astronomía y Matemáticas SIMS InGaAs RF magnetron sputtering Semiconducting ternary alloys Indium gallium arsenide layers (In x Ga 1 - x As) were prepared on Silicon (100) and glass substrates in an argon atmosphere by R.F. magnetron sputtering. The growth temperature was 580 °C and high purity targets of gallium arsenide and indium were used. The effects due to the RF power for the In sput tering and the substrate type on the deposited films were studied by X - ray diffraction and Raman microscopy. These studies revealed the formation of In x Ga 1 - x As with the zinc - blende phase. The results also show that at low In sputtering RF power, there is a preferential growth along of (111) direction. Morphology and thickness of the layers were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), revealing a variation of particle size and roughness. Energy dispersive spectroscopy (EDS) allowed us to determine the atomic percentages of In, Ga, and As. These results are in agreement with Raman measurements, where GaAs - like and InAs - like LO and TO vibrational modes were observed with a shift attributed to the indium concentrations in the InxGa1 - xAs layers. By secondary ion mass spectroscopy (SIMS), the interface quality was studied. 2016 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94246523001 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.2 Vol.29 |
| title | Structural, optical and morphological properties of InxGa1-xAs layers o btained by RF magnetron sputtering |
| topic | Física, Astronomía y Matemáticas SIMS InGaAs RF magnetron sputtering Semiconducting ternary alloys |
| url | https://www.redalyc.org/articulo.oa?id=94246523001 |