Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states
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Universidad Nacional Autónoma de México
Resumen: In previous work we have discussed the valence band electronic structure of the (001) oriented semi–infinite medium of the II–VI wide band gap zinc–blende semiconductor compounds. We have found three characteristic surface resonances besides the known bulk bands (heavy hole, light hole and...
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| Format: | Artículo de Investigación |
| Language: | English |
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Sociedad Mexicana de Física, A.C.
2003
Universidad Nacional Autónoma de México; Facultad de Ciencias |
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| _version_ | 1877697770162225153 |
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| author | Baquero , R. Olguín , D. |
| author_facet | Baquero , R. Olguín , D. |
| author_sort | Baquero , R. |
| collection | Repositorio Institucional UNAM |
| description | Resumen: In previous work we have discussed the valence band electronic structure of the (001) oriented semi–infinite medium of the II–VI wide band gap zinc–blende semiconductor compounds. We have found three characteristic surface resonances besides the known bulk bands (heavy hole, light hole and spin–orbit bands). Two of these resonances correspond to the anion–terminated surface and the third one to the cation terminated surface. Furthermore, we have shown that three non dispersive (001)–surface–induced bulk states, in the Γ − K direction of the 2D Brillouin zone, are also characteristic of these systems. To identify these states, from other known surface states, we have called them frontier–induced semi–infinite–medium states. In order to continue with the description of these systems, we review the main characteristics of the electronic structure of the (001)–surfaces and we present a detailed theoretical discussion of the frontier–induced semi–infinite–medium states. We use tight binding Hamiltonians and the well–known Surface Green’s Function Matching method to calculate the electronic surface band structure. |
| format | Artículo de Investigación |
| id | unam-41015 |
| institution | Universidad Nacional Autónoma de México |
| language | English |
| publishDate | 2003 |
| publisher | Sociedad Mexicana de Física, A.C. Universidad Nacional Autónoma de México; Facultad de Ciencias |
| record_format | dspace |
| spelling | Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states Baquero , R. Olguín , D. Físico Matemáticas y Ciencias de la Tierra Electronic states surface resonances tight binding method Procedencia: Universidad Nacional Autónoma de México Repositorio Institucional de la UNAM: https://repositorio.unam.mx/ Resumen: In previous work we have discussed the valence band electronic structure of the (001) oriented semi–infinite medium of the II–VI wide band gap zinc–blende semiconductor compounds. We have found three characteristic surface resonances besides the known bulk bands (heavy hole, light hole and spin–orbit bands). Two of these resonances correspond to the anion–terminated surface and the third one to the cation terminated surface. Furthermore, we have shown that three non dispersive (001)–surface–induced bulk states, in the Γ − K direction of the 2D Brillouin zone, are also characteristic of these systems. To identify these states, from other known surface states, we have called them frontier–induced semi–infinite–medium states. In order to continue with the description of these systems, we review the main characteristics of the electronic structure of the (001)–surfaces and we present a detailed theoretical discussion of the frontier–induced semi–infinite–medium states. We use tight binding Hamiltonians and the well–known Surface Green’s Function Matching method to calculate the electronic surface band structure. Sociedad Mexicana de Física, A.C. Universidad Nacional Autónoma de México; Facultad de Ciencias 2003-01-01 Text Artículo de Investigación application/pdf Cita bibliográfica: Baquero , R., et al. (2003). Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states. Revista Mexicana de Física; Vol 49, No 001. Recuperado de http://revistas.unam.mx/index.php/rmf/article/view/13862 ISSN: 2683-2224 (digital); 0035-001X (impresa) https://repositorio.unam.mx/contenidos/41015 eng Revista Mexicana de Física; Vol 49, No 001 (2003) http://revistas.unam.mx/index.php/rmf Nivel de acceso: Público La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-ND 4.0 Internacional, https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es, fecha de asignación de la licencia 2003-01-01, para un uso diferente consultar al responsable jurídico del repositorio por medio de rmf@ciencias.unam.mx |
| spellingShingle | Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states Baquero , R. Olguín , D. Físico Matemáticas y Ciencias de la Tierra Electronic states surface resonances tight binding method |
| title | Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states |
| title_full | Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states |
| title_fullStr | Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states |
| title_full_unstemmed | Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states |
| title_short | Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states |
| title_sort | electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states |
| topic | Físico Matemáticas y Ciencias de la Tierra Electronic states surface resonances tight binding method |
| topic_facet | Físico Matemáticas y Ciencias de la Tierra Electronic states surface resonances tight binding method |
| url | https://repositorio.unam.mx/contenidos/41015 |