Electronic structure for the series of Cu based chalcopyrites of the CulnMv2I Type

Fuente: Universidad Nacional Autónoma de México

Resumen: In this paper we study the electronic band structure for the series of Cu-based chalcopyrites CuInMV I2 with MV I= S,Se,Te. We use the tight-binding method and obtain the tight-binding parameters in such a way that we fit the experimental gap value for the whole series of Cu-based chalcopyr...

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Bibliographic Details
Main Authors: Tototzintle Huitle, H., Rodríguez, J. A., Baquero, R.
Format: Artículo de Investigación
Language:English
Published: Sociedad Mexicana de Física, A.C. 2008
Universidad Nacional Autónoma de México; Facultad de Ciencias
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Summary:Resumen: In this paper we study the electronic band structure for the series of Cu-based chalcopyrites CuInMV I2 with MV I= S,Se,Te. We use the tight-binding method and obtain the tight-binding parameters in such a way that we fit the experimental gap value for the whole series of Cu-based chalcopyrites. Chalcopyrites can deviate from the ideal symmetry in two ways: tetragonal deformation and anionic distortion. In this paper, we calculate the ideal configuration and the effect of anionic distortion. Our calculation can be used further to obtain surface, interface and superlattice electronic band structures using the Surface Green’s Function Matching Method in a straightforward way.