Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In 2 Se 3 (Adv. Mater. 20/2026)

Documenti analoghi

• Field-effect transistors based on charged domain walls in van der Waals ferroelectric α-In$_2$Se$_3$
  di: Nahid, Shahriar Muhammad, et al.
  Pubblicazione: (2025)
• Atomic and Electronic Structure of Strongly Charged Domain Walls in van der Waals α-In$_2$Se$_3$
  di: Nolan, Gillian, et al.
  Pubblicazione: (2026)
• Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors (Adv. Mater. 39/2024)
  di: Sihan Chen, et al.
  Pubblicazione: (2024)
• Van der Waals Colloidal Crystals (Adv. Mater. 23/2024)
  di: YongDeok Cho, et al.
  Pubblicazione: (2024)
• Thermal Radiation Sensors Based on Ionic‐Conducting Pectin Films
  di: Ezekiel Y. Hsieh, et al.
  Pubblicazione: (2025)