Ultra‐High Dielectric Acceptor Enables 21% Efficiency and Thickness‐Insensitive Organic Solar Cells
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| Formato: | Artículo Open Access |
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Wiley
2026
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| author | Youdi Zhang Hansheng Chen Ailing Yin Hao Wang Nan Ye Shuai Xu Pai Peng Peng Zhang Junfei Zhu Boyao Zhang Hongxiang Li Chen Xie Guangye Zhang Xiaotian Hu Lei Zhu Long Ye Huiliang Sun Shenghua Liu Qingqing Yang Tonghui Wang Shouguo Wang Qing Jiang Chunhui Duan Yiwang Chen Feng Liu Yongfang Li |
| author_facet | Youdi Zhang Hansheng Chen Ailing Yin Hao Wang Nan Ye Shuai Xu Pai Peng Peng Zhang Junfei Zhu Boyao Zhang Hongxiang Li Chen Xie Guangye Zhang Xiaotian Hu Lei Zhu Long Ye Huiliang Sun Shenghua Liu Qingqing Yang Tonghui Wang Shouguo Wang Qing Jiang Chunhui Duan Yiwang Chen Feng Liu Yongfang Li Youdi Zhang Hansheng Chen Ailing Yin Hao Wang Nan Ye Shuai Xu Pai Peng Peng Zhang Junfei Zhu Boyao Zhang Hongxiang Li Chen Xie Guangye Zhang Xiaotian Hu Lei Zhu Long Ye Huiliang Sun Shenghua Liu Qingqing Yang Tonghui Wang Shouguo Wang Qing Jiang Chunhui Duan Yiwang Chen Feng Liu Yongfang Li |
| collection | Wiley Open Access |
| contents | Ultra‐High Dielectric Acceptor Enables 21% Efficiency and Thickness‐Insensitive Organic Solar Cells Youdi Zhang Hansheng Chen Ailing Yin Hao Wang Nan Ye Shuai Xu Pai Peng Peng Zhang Junfei Zhu Boyao Zhang Hongxiang Li Chen Xie Guangye Zhang Xiaotian Hu Lei Zhu Long Ye Huiliang Sun Shenghua Liu Qingqing Yang Tonghui Wang Shouguo Wang Qing Jiang Chunhui Duan Yiwang Chen Feng Liu Yongfang Li Advanced Materials ABSTRACT Dielectric constant (ε r ) of non‐fullerene acceptors (NFAs) is a crucial parameter in organic solar cells (OSCs), significantly influencing exciton dissociation efficiency and charge recombination dynamics. However, the state‐of‐the‐art NFAs typically exhibit relatively low dielectric constants (ε r ≈ 3–5), which inherently limit device performance by promoting substantial recombination losses. Herein, a new guest acceptor named L8‐BO‐FO is reported by replacing the branched alkyl chains on L8‐BO with dimethyl ether units, which presents a higher ε r value of 7.41 than that of L8‐BO (4.57). Subsequently, the high‐ε r L8‐BO‐FO was introduced into the PM6:L8‐BO system to improve the dielectric property of the active layer, which, encouragingly, increases the ε r value of the active layer, accelerates exciton dynamics, and suppresses the nonradiative charge recombination. As a result, the power conversion efficiency (PCE) of the ternary OSCs is boosted up to 21.0%. Surprisingly, the ternary OSCs maintained an outstanding PCE of 19.1% even when the active‐layer thickness increased to 300 nm. This work brings new insights into the design of high‐performance OSCs with excellent thickness tolerance by dielectric engineering, which is essential for high‐throughput and scale‐up fabrication of OSCs. 10.1002/adma.73497 http://onlinelibrary.wiley.com/termsAndConditions#vor |
| doi_str_mv | 10.1002/adma.73497 |
| format | Artículo Open Access |
| id | wiley_oa_10_1002_adma_73497 |
| institution | Wiley Open Access |
| license_str_mv | http://onlinelibrary.wiley.com/termsAndConditions#vor |
| publishDate | 2026 |
| publisher | Wiley |
| record_format | wiley_oa |
| spellingShingle | Ultra‐High Dielectric Acceptor Enables 21% Efficiency and Thickness‐Insensitive Organic Solar Cells Youdi Zhang Hansheng Chen Ailing Yin Hao Wang Nan Ye Shuai Xu Pai Peng Peng Zhang Junfei Zhu Boyao Zhang Hongxiang Li Chen Xie Guangye Zhang Xiaotian Hu Lei Zhu Long Ye Huiliang Sun Shenghua Liu Qingqing Yang Tonghui Wang Shouguo Wang Qing Jiang Chunhui Duan Yiwang Chen Feng Liu Yongfang Li Advanced Materials Ultra‐High Dielectric Acceptor Enables 21% Efficiency and Thickness‐Insensitive Organic Solar Cells Youdi Zhang Hansheng Chen Ailing Yin Hao Wang Nan Ye Shuai Xu Pai Peng Peng Zhang Junfei Zhu Boyao Zhang Hongxiang Li Chen Xie Guangye Zhang Xiaotian Hu Lei Zhu Long Ye Huiliang Sun Shenghua Liu Qingqing Yang Tonghui Wang Shouguo Wang Qing Jiang Chunhui Duan Yiwang Chen Feng Liu Yongfang Li Advanced Materials ABSTRACT Dielectric constant (ε r ) of non‐fullerene acceptors (NFAs) is a crucial parameter in organic solar cells (OSCs), significantly influencing exciton dissociation efficiency and charge recombination dynamics. However, the state‐of‐the‐art NFAs typically exhibit relatively low dielectric constants (ε r ≈ 3–5), which inherently limit device performance by promoting substantial recombination losses. Herein, a new guest acceptor named L8‐BO‐FO is reported by replacing the branched alkyl chains on L8‐BO with dimethyl ether units, which presents a higher ε r value of 7.41 than that of L8‐BO (4.57). Subsequently, the high‐ε r L8‐BO‐FO was introduced into the PM6:L8‐BO system to improve the dielectric property of the active layer, which, encouragingly, increases the ε r value of the active layer, accelerates exciton dynamics, and suppresses the nonradiative charge recombination. As a result, the power conversion efficiency (PCE) of the ternary OSCs is boosted up to 21.0%. Surprisingly, the ternary OSCs maintained an outstanding PCE of 19.1% even when the active‐layer thickness increased to 300 nm. This work brings new insights into the design of high‐performance OSCs with excellent thickness tolerance by dielectric engineering, which is essential for high‐throughput and scale‐up fabrication of OSCs. 10.1002/adma.73497 http://onlinelibrary.wiley.com/termsAndConditions#vor |
| title | Ultra‐High Dielectric Acceptor Enables 21% Efficiency and Thickness‐Insensitive Organic Solar Cells |
| topic | Advanced Materials |
| url | https://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.73497 |