Highly Reliable Hf1‐XZrXO2 with Ultra‐Low Operation Voltage (< 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer

Fuente: Wiley Open Access

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Bibliographic Details
Main Authors:	Mostafa Habibi, Alireza Kashir, Tony Schenk, Hojung Jang, Seungyeol Oh, Jaeseon Kim, Geonhui Han, Donghwa Lee, Foroozan Koushan, Hyunsang Hwang
Format:	Artículo Open Access
Published:	Wiley 2025
Subjects:	Advanced Materials Technologies
Online Access:	Acceder al recurso
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