Tungsten Diselenide Transistors: Layer Number Dependence, Channel Passivation and In‐Plane Gates
Fuente:
Wiley Open Access
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Artículo Open Access |
| Published: |
Wiley
2026
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| DOI: | 10.1002/admt.71085 |
|---|