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An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC
An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC
Fuente:
Wiley Open Access
Saved in:
Bibliographic Details
Main Authors:
Liwei Jin
,
Zhiqun Cheng
,
Yonghui Wang
,
Guohua Liu
Format:
Artículo Open Access
Published:
Wiley
2024
Subjects:
International Journal of Circuit Theory and Applications
Online Access:
Acceder al recurso
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https://onlinelibrary.wiley.com/doi/10.1002/cta.3941
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